申请人:Shin-Etsu Chemical Co., Ltd.
公开号:US20160139512A1
公开(公告)日:2016-05-19
A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units capable of forming lactone under the action of acid in a C
7
-C
16
ester or C
8
-C
16
ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.