Novel polymers, resist compositions and patterning process
申请人:——
公开号:US20010033989A1
公开(公告)日:2001-10-25
Polymers having fluorinated ester groups are novel. Using the polymers, resist compositions featuring low absorption of F
2
excimer laser light are obtained.
Polymer, chemically amplified resist composition and patterning process
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:US20020004569A1
公开(公告)日:2002-01-10
Polymers comprising recurring units of cycloolefin having fluorinated alkyl introduced therein are novel and have transparency and alkali solubility. Using the polymers, resist compositions featuring low absorption of F
2
excimer laser light are obtained.
Perfluoropolycycloalkane are provided. These perfluoropolycycloalkanes are ring assemblies having (a) at least two perfluorinated cyclohexane rings, (b) at least two perfluorinated fused ring systems, or (c) combinations of at least one perfluorinated cyclohexane ring with at least one perfluorinated fused ring system, each perfluorinated ring or fused ring system being directly joined to another perfluorinated ring or ring system by a single bond and the ring assemblies having a total of at least 13 carbon atoms.
Protective coatings of perfluorinated polymer solutions
申请人:E.I. DU PONT DE NEMOURS AND COMPANY
公开号:EP0584703A1
公开(公告)日:1994-03-02
A metal is coated with a solution of perfluorocarbon polymer ion-exchange polymer having carboxyl groups. The solvents for making the solution are perfluorocycloalkanes, perfluorinated aromatic compounds and perfluorotrialkyl amines. The solvents have a critical temperature greater than 150° C. The polymer coating acts as a barrier to anions which attack and breakdown the passivity of such metals, thereby protecting the metals against localized corrosion, such as crevice or pitting corrosion.
Fluorine-containing polymers, resist compositions and patterning process
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:EP1126322A2
公开(公告)日:2001-08-22
Polymers having fluorinated ester groups are novel. Using the polymers, resist compositions featuring low absorption of F2 excimer laser light are obtained.