A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.
含
硅薄膜由一种热固化组合物形成,该组合物包括:(A) 一种含
硅化合物,该化合物是通过在酸催化剂存在下使一种可
水解的
硅化合物发生
水解缩合,并从反应混合物中基本除去酸催化剂而获得;(B)
锂、
钠、
钾、
铷或
铯的氢氧化物或有机酸盐,或一种锍、
碘或
铵化合物;(C) 一种有机酸;以及 (D) 一种有机溶剂。含
硅薄膜可以有效地将上覆的光刻胶薄膜图案化。该组合物能有效地减少光刻后图案缺陷的出现,并具有货架稳定性。