A radiation absorbing polymer is characterized by having a main chain of copolymer containing recurring units with dicarboxylic acid or carboxylic anhydride group with an organic chromophore bonded to the carboxyl group through methylene or alkylene linkage group, where the organic chromophore is bonded to the carboxyl group by esterification reaction.
Residual carboxyl groups of the radiation absorbing polymer can optionally be amidized and/or imidized with an aromatic compounds having a reactive amino group.
The radiation absorbing polymer shows a good step coverage when the polymer is dissolved in the same solvent as is used for resist solution together with, upon necessity, an aromatic compound with a reactive amino group to improve the characteristics and can form an antireflective coating which is insoluble in a resist solvent after baking the coated film on the substrates.
Then the photoresist is applied on the antireflective coating and is exposed by radiation such as deep ultraviolet radiation. A resist pattern with high resolving power is formed, which is not affected by standing wave upon manufacturing integrated circuit elements.
辐射吸收聚合物的特点是具有共聚物主链,共聚物主链含有带有二
羧酸或
羧酸酐基团的重复单元,羧基上通过亚甲基或亚烷基连接基团键合有 机发色团,其中有机发色团通过酯化反应键合到羧基上。
辐射吸收聚合物的残余羧基可选择与具有活性
氨基的芳香族化合物进行酰胺化和/或
酰亚胺化。
将辐射吸收聚合物溶解在与光刻胶溶液相同的溶剂中,并根据需要加入具有活性
氨基的芳香族化合物以改善其特性时,辐射吸收聚合物可显示出良好的阶跃覆盖性,并可在基底上烘烤涂膜后形成不溶于光刻胶溶剂的抗反射涂层。
然后在抗反射涂层上涂敷光刻胶,并通过深紫外线等辐射进行曝光。这样就形成了具有高分辨率的抗蚀图案,在制造集成电路元件时不会受到驻波的影响。