2-methyl-5-pentylhydroxylamine

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: 2-methyl-5-pentylhydroxylamine
• 英文别名: N-(4-methylpentyl)hydroxylamine
• 化学式: C₆H₁₅NO
• 分子量: 117.191
• InChiKey: LCDPHSHZYJMDOB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.4
• 重原子数：
  8
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  32.3
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2-methyl-5-pentylhydroxylamine 在 氧气 、 sodium hydride 、 碳酸氢钠 、 N,N-二异丙基乙胺 、 溶剂红 43 作用下， 以 四氢呋喃 、 二氯甲烷 为溶剂， 反应 39.25h， 生成 N-(4-hydroxy-4-methylpentyl)benzamide
  参考文献：
  名称：

  有机光氧化还原催化未活化的sp3 C-H键的酰胺基自由基定向远程烯丙基化

  摘要：

  报道了未激活的sp 3 C-H键的可见光介导的烯丙基化的发展。远程烯丙基化是由酰胺基进行的，该酰胺基是由预官能化酰胺前体的光催化裂解生成的。芳香族和脂肪族酰胺衍生物均可成功地以高收率交付偏远的CH烯丙基化产物。多种缺电子的烯丙基砜系统可用作δ-碳自由基受体。

  DOI：

  10.1002/anie.201811004
• 作为产物：
  描述：

  isohexanal oxime 在 盐酸 、 sodium cyanoborohydride 作用下， 以 甲醇 、 水 为溶剂， 反应 3.0h， 生成 2-methyl-5-pentylhydroxylamine
  参考文献：
  名称：

  有机光氧化还原催化未活化的sp3 C-H键的酰胺基自由基定向远程烯丙基化

  摘要：

  报道了未激活的sp 3 C-H键的可见光介导的烯丙基化的发展。远程烯丙基化是由酰胺基进行的，该酰胺基是由预官能化酰胺前体的光催化裂解生成的。芳香族和脂肪族酰胺衍生物均可成功地以高收率交付偏远的CH烯丙基化产物。多种缺电子的烯丙基砜系统可用作δ-碳自由基受体。

  DOI：

  10.1002/anie.201811004

文献信息

• Alpha-aryl-N-alkylnitrones and pharmaceutical compositions containing the same
  申请人：Kelleher A. Judith

  公开号：US20050124691A1

  公开（公告）日：2005-06-09

  Disclosed are novel α-aryl-N-alkylnitrone compounds and pharmaceutical compositions containing such compounds. The disclosed compositions are useful as therapeutics for preventing and/or treating neurodegenerative, autoimmune and inflammatory conditions in mammals and as analytical reagents for detecting free radicals.

  本发明涉及一种新型的α-芳基-N-烷基亚硝基化合物和含有这种化合物的药物组合物。所述组合物可用作治疗哺乳动物神经退行性、自身免疫和炎症疾病的治疗剂，并可用作检测自由基的分析试剂。
• SUBSTRATE CLEANER FOR COPPER WIRING, AND METHOD FOR CLEANING COPPER WIRING SEMICONDUCTOR SUBSTRATE
  申请人：Wako Pure Chemical Industries, Ltd.

  公开号：EP2647693A1

  公开（公告）日：2013-10-09

  It is an object of the present invention to provide a cleaning agent for a substrate having a copper wiring, which makes possible to sufficiently suppress elution of metal copper, and remove impurities or particles of copper hydroxide (II), copper oxide (II) and the like, generated by the chemical mechanical polishing (CMP) process, in cleaning of a semiconductor substrate after the chemical mechanical polishing (CMP) process, in a manufacturing process of the semiconductor substrate; and a method for cleaning a semiconductor substrate having a copper wiring, characterized by using the relevant substrate cleaner for a copper wiring: and the present invention relates to a cleaning agent for a substrate having a copper wiring consisting of an aqueous solution comprising [I] an amino acid represented by the following general formula [1], and [II] an alkylhydroxylamine; and a method for cleaning a semiconductor substrate having a copper wiring characterized by using the relevant cleaning agent for a substrate having a copper wiring; (wherein R1 represents a hydrogen atom, a carboxymethyl group or a carboxyethyl group; and R2 and R3 each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, which may have a hydroxyl group, provided that those where R1 to R3 are all hydrogen atoms are excluded.).

  本发明的目的是提供一种用于具有铜布线的衬底的清洗剂，该清洗剂能够在半导体衬底的制造过程中，在化学机械抛光(CMP)工序后清洗半导体衬底时，充分抑制金属铜的洗脱，并除去化学机械抛光(CMP)工序产生的氢氧化铜(II)、氧化铜(II)等杂质或颗粒；以及一种用于清洗具有铜布线的半导体衬底的方法，其特征在于使用相关的用于铜布线的衬底清洗剂：以及本发明涉及一种用于具有铜布线的衬底的清洁剂，该清洁剂由水溶液组成，该水溶液包含[I]由以下通式[1]表示的氨基酸和[II]烷基羟胺；以及一种用于清洁具有铜布线的半导体衬底的方法，其特征在于使用用于具有铜布线的衬底的相关清洁剂； (其中R1代表氢原子、羧甲基或羧乙基；R2和R3各自独立地代表氢原子或具有1至4个碳原子的烷基，该烷基可以具有羟基，但不包括R1至R3均为氢原子的情况)。
• CLEANING AGENT FOR METAL WIRING SUBSTRATE, AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE
  申请人：Wako Pure Chemical Industries, Ltd.

  公开号：EP2985783A1

  公开（公告）日：2016-02-17

  It is a subject of the present invention to provide a cleaning agent for a substrate having a metal wiring, and a cleaning method for a semiconductor substrate comprising that the cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical polishing (CMP) in a manufacturing process of a semiconductor device. (1) Residues of fine particles (polishing agents) used in the CMP process, fine particles (metal particles) derived from a polished metal, an anticorrosive, and the like, can be removed sufficiently. (2) A coating film (protective film: oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An oxide film containing a metal oxide can be formed after removal (stripping) of the coating film. (4) A semiconductor substrate can be obtained stably for a long period of time, without impairing flatness of the surface of the metal wiring (the surface of the oxide film containing the metal oxide), even leaving a substrate after the cleaning process after the CMP. (5) It is hard to deteriorate even after using the cleaning agent for a long period of time. The present invention relates to a cleaning agent for a substrate having a metal wiring, comprising an aqueous solution containing (A) carboxylic acid having a nitrogen-containing heterocyclic ring and (B) alkylhydroxylamine, and having a pH of 10 or higher, as well as a cleaning method for a semiconductor substrate, comprising that the cleaning agent is used.

  本发明的目的是提供一种用于具有金属配线的基板的清洗剂，以及一种半导体基板的清洗方法，包括在半导体器件制造工艺中化学机械抛光（CMP）后的清洗工序中使用该清洗剂，从而获得以下效果（1）至（5）。(1) 可以充分去除 CMP 工序中使用的细颗粒（抛光剂）残留物、抛光金属产生的细颗粒（金属颗粒）、防腐剂等。(2) 可以充分去除（剥离）金属布线表面的涂膜（保护膜：抗氧化膜），该涂膜含有在 CMP 工艺中形成的防腐剂（如苯并三唑或喹啉二酸）与金属布线表面金属之间的络合物。(3) 在去除（剥离）涂膜后，可形成含有金属氧化物的氧化膜。(4) 即使在 CMP 后的清洗工序后离开基板，也能长期稳定地获得半导体基板，而不会影响金属布线表面（含有金属氧化物的氧化膜表面）的平整度。(5) 即使长期使用该清洗剂也不易变质。 本发明涉及一种用于具有金属配线的衬底的清洗剂，包括含有(A)具有含氮杂环的羧酸和(B)烷基羟胺且 pH 值为 10 或更高的水溶液，以及一种半导体衬底的清洗方法，其中包括使用该清洗剂。
• $g(a)-ARYL-$i(N)-ALKYLNITRONES AND PHARMACEUTICAL COMPOSITIONS CONTAINING THE SAME
  申请人：Renovis, Inc.

  公开号：EP1025079B1

  公开（公告）日：2005-02-02
• CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATES AND METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE SURFACE
  申请人：Wako Pure Chemical Industries, Ltd.

  公开号：EP3051577B1

  公开（公告）日：2017-10-18