1-ethyl-3,5-dimethoxy-2-methyl-benzene

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 1-ethyl-3,5-dimethoxy-2-methyl-benzene
• 英文别名: 1-Aethyl-3,5-dimethoxy-2-methyl-benzol；1-Ethyl-3,5-dimethoxy-2-methylbenzene
• 化学式: C₁₁H₁₆O₂
• 分子量: 180.247
• InChiKey: XLXHFXUVFYUCNT-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  13
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  18.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  1-ethyl-3,5-dimethoxy-2-methyl-benzene 在 alkaline aqueous potassium permanganate solution 作用下， 生成 3,5-dimethoxy-2-methyl-benzoic acid 、 2-ethyl-4,6-dimethoxy-benzoic acid
  参考文献：
  名称：

  Hetherington; Raistrick, Philosophical Transactions of the Royal Society of London, 1931, vol. 220, p. 269,278

  摘要：

  DOI：
• 作为产物：
  描述：

  5-ethyl-4-methyl-resorcinol 、 硫酸二甲酯 在 sodium hydroxide 作用下， 生成 1-ethyl-3,5-dimethoxy-2-methyl-benzene
  参考文献：
  名称：

  Hetherington; Raistrick, Philosophical Transactions of the Royal Society of London, 1931, vol. 220, p. 269,278

  摘要：

  DOI：

文献信息

• [EN] 2-ARYL- AND 2-HETEROARYL-SUBSTITUTED 2-PYRIDAZIN-3(2H)-ONE COMPOUNDS AS INHIBITORS OF FGFR TYROSINE KINASES<br/>[FR] COMPOSÉS DE 2-PYRIDAZIN-3(2H)-ONE À SUBSTITUTION 2-ARYLE ET 2-HÉTÉROARYLE UTILISÉS EN TANT QU'INHIBITEURS DE FGFR TYROSINE KINASES
  申请人：ARRAY BIOPHARMA INC

  公开号：WO2017070708A1

  公开（公告）日：2017-04-27

  Provided herein are compounds of the general Formula I: and stereoisomers and pharmaceutically acceptable salts or solvates thereof, in which X, R1, R2, R3, Ring A and z have the meanings given in the specification, which are inhibitors of FGFR1, FGFR2, FGFR3 and/or FGFR4 and are useful in the treatment and prevention of diseases which can be treated with an FGFR inhibitor, including diseases or disorders mediated by FGFR1, FGFR2, FGFR3 and/or FGFR4.

  本文提供了一般式I的化合物及其立体异构体和药学上可接受的盐或溶剂，其中X、R1、R2、R3、环A和z的含义如规范中所述，这些化合物是FGFR1、FGFR2、FGFR3和/或FGFR4的抑制剂，可用于治疗和预防可以用FGFR抑制剂治疗的疾病，包括由FGFR1、FGFR2、FGFR3和/或FGFR4介导的疾病或障碍。
• Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same
  申请人：Ogihara Tsutomu

  公开号：US20100285407A1

  公开（公告）日：2010-11-11

  There is disclosed a thermosetting silicon-containing antireflection film-forming composition, to form a silicon-containing antireflection film in a multilayer resist process used in a lithography, wherein the composition is at least capable of forming—on an organic film that is an underlayer film having a naphthalene skeleton—a silicon-containing antireflection film whose refractive index “n” and extinction coefficient “k” at 193 nm satisfy the following relationship: 2n−3.08≦k≦20n−29.4 and 0.01≦k≦0.5. There can be provided, in a multilayer resist process used in a lithography, a thermosetting silicon-containing antireflection film-forming composition to form a silicon-containing antireflection film which can form an excellent pattern having depressed reflection of an exposing light at the time when a photoresist film is formed on the silicon-containing antireflection film formed on an organic film having a naphthalene skeleton as a resist underlayer film and subsequently a resist pattern is formed; has excellent dry etching properties between the photoresist film—which is the upperlayer of the silicon-containing antireflection film—and the organic film—which is the underlayer—; and has an excellent storage stability, and a substrate having the silicon-containing antireflection film from the composition for forming the silicon-containing antireflection film, and a patterning process using the same.
• Hetherington; Raistrick, Philosophical Transactions of the Royal Society of London, 1931, vol. <B> 220, p. 269,278
  作者：Hetherington、Raistrick

  DOI：——

  日期：——