Provided is a method for producing a semiconductor substrate which is capable of easily reducing residue of an ion injection mask formed using a composition containing an organopolysiloxane. This method comprises: a mask formation step of forming a mask on a semiconductor substrate to be processed, using an energy-sensitive composition comprising an organopolysiloxane, an ion implantation step of implanting ions into the semiconductor substrate to be processed, the semiconductor substrate being provided with the mask, and a mask removal step of removing the mask, wherein the mask removal step comprises: a first step comprising at least one of: contacting the mask with a first treatment liquid containing an oxidizing agent and irradiating the mask with plasma generated using an oxygen-containing gas, and a second step comprising bringing the mask after being subjected to the first step into contact with a second treatment liquid comprising fluoride ions.
本发明提供了一种生产半导体衬底的方法,该方法能够轻松减少使用含有有机聚
硅氧烷的组合物形成的离子注入掩模的残留物。该方法包括:使用包含有机聚
硅氧烷的能量敏感组合物在待处理的半导体衬底上形成掩膜的掩膜形成步骤;将离子注入待处理的半导体衬底的离子注入步骤,该半导体衬底带有掩膜;以及去除掩膜的掩膜去除步骤,其中掩膜去除步骤包括:第一步骤,包括将掩膜与含有氧化剂的第一处理液接触,以及用含
氧气体产生的等离子体照射掩膜,以及第二步骤,包括将经过第一步骤处理后的掩膜与含有
氟离子的第二处理液接触。