噻吩并[3,2-f:4,5-f]双[1]苯并噻吩 | 74902-84-4

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并噻吩类
• 中文名称: 噻吩并[3,2-f:4,5-f]双[1]苯并噻吩
• 英文名称: thieno[3,2-f:4,5-f']bis[1]benzothiophene
• 英文别名: Thieno[3,2-f:4,5-f]bis[1]benzothiophene；7,11,15-trithiapentacyclo[10.7.0.02,10.04,8.014,18]nonadeca-1(12),2(10),3,5,8,13,16,18-octaene
• CAS: 74902-84-4
• 化学式: C₁₆H₈S₃
• 分子量: 296.438
• InChiKey: HNDGEYCCZGRMTN-UHFFFAOYSA-N

物化性质

• 熔点：
  272-273℃
• 密度：
  1.525

计算性质

• 辛醇/水分配系数(LogP)：
  6.3
• 重原子数：
  19
• 可旋转键数：
  0
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  84.7
• 氢给体数：
  0
• 氢受体数：
  3

安全信息

• 海关编码：
  2934999090

反应信息

• 作为反应物：
  描述：

  噻吩并[3,2-f:4,5-f]双[1]苯并噻吩 在 2,2,6,6-四甲基哌啶 、 正丁基锂 、 1,1'-双(二苯膦基)二茂铁二氯化钯(II)二氯甲烷复合物 、 zinc(II) chloride 作用下， 以 四氢呋喃 、 正己烷 、 甲苯 为溶剂， 反应 33.33h， 生成
  参考文献：
  名称：

  Coating solution for non-light-emitting organic semiconductor device, organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor device, material for organic transistor, method for manufacturing organic transistor, and method for manufacturing organic semiconductor film

  摘要：

  提供了一种用于具有高载流子迁移率的非发光有机半导体器件的涂层溶液，其中该溶液含有由化合物代表的化合物（2）和沸点等于或高于100°C的溶剂，有机晶体管，化合物，用于非发光有机半导体器件的有机半导体材料，有机晶体管的材料，制造有机晶体管的方法，以及制造有机半导体膜的方法。（在化合物（2）中，R11和R12分别独立表示氢原子，烷基，烯基，炔基或烷氧基，并且可能具有取代基，化合物（2）中的芳香部分可能被卤素原子取代。）

  公开号：

  US10115911B2
• 作为产物：
  描述：

  2,5-bis(3-formyl[2]thienylmethyl)thiophene 在 amberlyst-15 作用下， 以 苯 为溶剂， 以46%的产率得到噻吩并[3,2-f:4,5-f]双[1]苯并噻吩
  参考文献：
  名称：

  所述的合成抗和顺式噻吩并异构体[ ˚F，˚F  “]双[1]苯并噻吩。的的光学和电化学性能的比较抗与顺式异构体1

  摘要：

  我们报告了噻吩[2,3- f：5,4- f  '] bis [1]苯并噻吩和噻吩[3,2- f：4,5- f  '] bis [1]苯并噻吩的纯异构体合成。防和顺式由交替的噻吩和苯环的五环化合物的异构体。两者的光学和电化学性质均已报道。在反异构体中，三个噻吩单元的带状嵌入会导致近平面分子在固态下具有良好的π-π堆积行为，如X射线晶体结构分析所示。

  DOI：

  10.1021/jo048010w

文献信息

• High performance solution-crystallized thin-film transistors based on V-shaped thieno[3,2-f:4,5-f′]bis[1]benzothiophene semiconductors
  作者：Chikahiko Mitsui、Hiroaki Tsuyama、Ryoji Shikata、Yoshinori Murata、Hiroyuki Kuniyasu、Masakazu Yamagishi、Hiroyuki Ishii、Akito Yamamoto、Yuri Hirose、Masafumi Yano、Tsunayoshi Takehara、Takeyuki Suzuki、Hiroyasu Sato、Akihito Yamano、Eiji Fukuzaki、Tetsuya Watanabe、Yoshihisa Usami、Jun Takeya、Toshihiro Okamoto

  DOI：10.1039/c6tc04721a

  日期：——

  A new class of solution-processable thieno[3,2-f:4,5-f′]bis[1]benzothiophene (TBBT-V) semiconductors are facilely synthesized and fully investigated.

  一种新型可溶液加工的噻吩[3,2-f:4,5-f']双[1]苯并噻吩(TBBT-V)半导体被轻松合成并进行了全面研究。
• COATING SOLUTION FOR NON-EMISSIVE ORGANIC SEMICONDUCTOR DEVICE, ORGANIC TRANSISTOR, COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL FOR NON-EMISSIVE ORGANIC SEMICONDUCTOR DEVICE, MATERIAL FOR ORGANIC TRANSISTOR, METHOD FOR MANUFACTURING ORGANIC TRANSISTOR, AND METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR FILM
  申请人：Fujifilm Corporation

  公开号：EP3125298A1

  公开（公告）日：2017-02-01

  Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100°C, an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

  本发明提供了一种用于具有高载流子迁移率的非发光有机半导体器件的涂层溶液（该涂层溶液含有式（2）代表的化合物和沸点等于或高于 100°C 的溶剂）、一种有机晶体管、一种化合物、一种用于非发光有机半导体器件的有机半导体材料、一种用于有机晶体管的材料、一种制造有机晶体管的方法以及一种制造有机半导体薄膜的方法。 (在式(2)中，R11和R12各自独立地代表氢原子、烷基、烯基、炔基或烷氧基，并且可以具有取代基，式(2)中的芳香族部分可以被卤原子取代)。
• ORGANIC TRANSISTOR, COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, MATERIAL FOR ORGANIC TRANSISTOR, COATING LIQUID FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ORGANIC TRANSISTOR, METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, AND METHOD FOR SYNTHESIZING ORGANIC SEMICONDUCTOR MATERIAL
  申请人：Fujifilm Corporation

  公开号：EP3125322A1

  公开（公告）日：2017-02-01

  Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR5; Y and Z each represents CR6, an oxygen, sulfur, selenium, or nitrogen atom, or NR7; a ring containing Y and Z is an aromatic heterocycle; any one of R1 and R2 and the aromatic heterocycle containing Y and Z or any one of R3 and R4 and a benzene ring may be bonded to each other through a specific divalent linking group; R1, R2, and R5 to R8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R3 and R4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2.)

  本发明提供了一种具有高载流子迁移率的有机晶体管，该晶体管的半导体有源层含有分子量等于或小于3000的下式表示的化合物、化合物、用于非发光有机半导体器件的有机半导体材料、用于有机晶体管的材料、用于非发光有机半导体器件的涂层溶液、制造有机晶体管的方法、制造有机半导体薄膜的方法、用于非发光有机半导体器件的有机半导体薄膜以及制造有机半导体材料的方法。 (X代表氧原子、硫原子、硒原子或碲原子或NR5；Y和Z各自代表CR6、氧原子、硫原子、硒原子或氮原子或NR7；含有Y和Z的环是芳香杂环；R1和R2中的任一个与含有Y和Z的芳香杂环或R3和R4中的任一个与苯环可通过特定的二价连接基团相互键合；R1、R2 和 R5 至 R8 分别代表氢原子、烷基、烯基、炔基、芳基或杂芳基；R3 和 R4 分别代表烷基、烯基、炔基、芳基或杂芳基；以及 m 和 n 分别为 0 至 2 的整数。)
• Organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor device, material for organic transistor, coating solution for non-light-emitting organic semiconductor device, method for manufacturing organic transistor, method for manufacturing organic semiconductor film, organic semiconductor film for non-light-emitting organic semiconductor device, and method for synthesizing organic semiconductor material
  申请人：FUJIFILM Corporation

  公开号：US10270043B2

  公开（公告）日：2019-04-23

  Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR5; Y and Z each represents CR6, an oxygen, sulfur, selenium, or nitrogen atom, or NR7; a ring containing Y and Z is an aromatic heterocycle; any one of R1 and R2 and the aromatic heterocycle containing Y and Z or any one of R3 and R4 and a benzene ring may be bonded to each other through a specific divalent linking group; R1, R2, and R5 to R8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R3 and R4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2).

  本发明提供了一种具有高载流子迁移率的有机晶体管，该晶体管的半导体有源层含有分子量等于或小于3000的下式表示的化合物、化合物、用于非发光有机半导体器件的有机半导体材料、用于有机晶体管的材料、用于非发光有机半导体器件的涂层溶液、制造有机晶体管的方法、制造有机半导体薄膜的方法、用于非发光有机半导体器件的有机半导体薄膜以及制造有机半导体材料的方法。 (X代表氧原子、硫原子、硒原子或碲原子或NR5；Y和Z各自代表CR6、氧原子、硫原子、硒原子或氮原子或NR7；含有Y和Z的环是芳香杂环；R1和R2中的任一个与含有Y和Z的芳香杂环或R3和R4中的任一个与苯环可通过特定的二价连接基团相互键合；R1、R2 和 R5 至 R8 分别代表氢原子、烷基、烯基、炔基、芳基或杂芳基；R3 和 R4 分别代表烷基、烯基、炔基、芳基或杂芳基；m 和 n 分别为 0 至 2 的整数。）
• Coating solution for non-light-emitting organic semiconductor device, organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor device, material for organic transistor, method for manufacturing organic transistor, and method for manufacturing organic semiconductor film
  申请人：FUJIFILM Corporation

  公开号：US10270044B2

  公开（公告）日：2019-04-23

  Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

  本发明提供了一种用于具有高载流子迁移率的非发光有机半导体器件的涂层溶液，该涂层溶液含有式（2）代表的化合物和沸点等于或高于100℃的溶剂、一种有机晶体管、一种化合物、一种用于非发光有机半导体器件的有机半导体材料、一种用于有机晶体管的材料、一种制造有机晶体管的方法以及一种制造有机半导体薄膜的方法。 (在式(2)中，R11和R12各自独立地代表氢原子、烷基、烯基、炔基或烷氧基，并且可以具有取代基，式(2)中的芳香族部分可以被卤原子取代)。