2,5-bis(3-formyl[2]thienylmethyl)thiophene | 676996-57-9

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 噻吩类
• 英文名称: 2,5-bis(3-formyl[2]thienylmethyl)thiophene
• 英文别名: 2-[[5-[(3-Formylthiophen-2-yl)methyl]thiophen-2-yl]methyl]thiophene-3-carbaldehyde
• CAS: 676996-57-9
• 化学式: C₁₆H₁₂O₂S₃
• 分子量: 332.468
• InChiKey: VQBAQWMBNUXLCC-UHFFFAOYSA-N

物化性质

• 沸点：
  495.4±40.0 °C(Predicted)
• 密度：
  1.385±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  21
• 可旋转键数：
  6
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.12
• 拓扑面积：
  119
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为反应物：
  描述：

  2,5-bis(3-formyl[2]thienylmethyl)thiophene 在 amberlyst-15 作用下， 以 苯 为溶剂， 以46%的产率得到噻吩并[3,2-f:4,5-f]双[1]苯并噻吩
  参考文献：
  名称：

  所述的合成抗和顺式噻吩并异构体[ ˚F，˚F  “]双[1]苯并噻吩。的的光学和电化学性能的比较抗与顺式异构体1

  摘要：

  我们报告了噻吩[2,3- f：5,4- f  '] bis [1]苯并噻吩和噻吩[3,2- f：4,5- f  '] bis [1]苯并噻吩的纯异构体合成。防和顺式由交替的噻吩和苯环的五环化合物的异构体。两者的光学和电化学性质均已报道。在反异构体中，三个噻吩单元的带状嵌入会导致近平面分子在固态下具有良好的π-π堆积行为，如X射线晶体结构分析所示。

  DOI：

  10.1021/jo048010w
• 作为产物：
  描述：

  2,5-噻吩二甲醛 在 正丁基锂 、 sodium cyanoborohydride 、 zinc(II) iodide 作用下， 以 四氢呋喃 、 乙醚 、 正己烷 、 1,2-二氯乙烷 为溶剂， 反应 2.25h， 生成 2,5-bis(3-formyl[2]thienylmethyl)thiophene
  参考文献：
  名称：

  所述的合成抗和顺式噻吩并异构体[ ˚F，˚F  “]双[1]苯并噻吩。的的光学和电化学性能的比较抗与顺式异构体1

  摘要：

  我们报告了噻吩[2,3- f：5,4- f  '] bis [1]苯并噻吩和噻吩[3,2- f：4,5- f  '] bis [1]苯并噻吩的纯异构体合成。防和顺式由交替的噻吩和苯环的五环化合物的异构体。两者的光学和电化学性质均已报道。在反异构体中，三个噻吩单元的带状嵌入会导致近平面分子在固态下具有良好的π-π堆积行为，如X射线晶体结构分析所示。

  DOI：

  10.1021/jo048010w

文献信息

• ORGANIC TRANSISTOR, COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, MATERIAL FOR ORGANIC TRANSISTOR, COATING LIQUID FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ORGANIC TRANSISTOR, METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, AND METHOD FOR SYNTHESIZING ORGANIC SEMICONDUCTOR MATERIAL
  申请人：Fujifilm Corporation

  公开号：EP3125322A1

  公开（公告）日：2017-02-01

  Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR5; Y and Z each represents CR6, an oxygen, sulfur, selenium, or nitrogen atom, or NR7; a ring containing Y and Z is an aromatic heterocycle; any one of R1 and R2 and the aromatic heterocycle containing Y and Z or any one of R3 and R4 and a benzene ring may be bonded to each other through a specific divalent linking group; R1, R2, and R5 to R8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R3 and R4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2.)

  本发明提供了一种具有高载流子迁移率的有机晶体管，该晶体管的半导体有源层含有分子量等于或小于3000的下式表示的化合物、化合物、用于非发光有机半导体器件的有机半导体材料、用于有机晶体管的材料、用于非发光有机半导体器件的涂层溶液、制造有机晶体管的方法、制造有机半导体薄膜的方法、用于非发光有机半导体器件的有机半导体薄膜以及制造有机半导体材料的方法。 (X代表氧原子、硫原子、硒原子或碲原子或NR5；Y和Z各自代表CR6、氧原子、硫原子、硒原子或氮原子或NR7；含有Y和Z的环是芳香杂环；R1和R2中的任一个与含有Y和Z的芳香杂环或R3和R4中的任一个与苯环可通过特定的二价连接基团相互键合；R1、R2 和 R5 至 R8 分别代表氢原子、烷基、烯基、炔基、芳基或杂芳基；R3 和 R4 分别代表烷基、烯基、炔基、芳基或杂芳基；以及 m 和 n 分别为 0 至 2 的整数。)
• Organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor device, material for organic transistor, coating solution for non-light-emitting organic semiconductor device, method for manufacturing organic transistor, method for manufacturing organic semiconductor film, organic semiconductor film for non-light-emitting organic semiconductor device, and method for synthesizing organic semiconductor material
  申请人：FUJIFILM Corporation

  公开号：US10270043B2

  公开（公告）日：2019-04-23

  Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR5; Y and Z each represents CR6, an oxygen, sulfur, selenium, or nitrogen atom, or NR7; a ring containing Y and Z is an aromatic heterocycle; any one of R1 and R2 and the aromatic heterocycle containing Y and Z or any one of R3 and R4 and a benzene ring may be bonded to each other through a specific divalent linking group; R1, R2, and R5 to R8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R3 and R4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2).

  本发明提供了一种具有高载流子迁移率的有机晶体管，该晶体管的半导体有源层含有分子量等于或小于3000的下式表示的化合物、化合物、用于非发光有机半导体器件的有机半导体材料、用于有机晶体管的材料、用于非发光有机半导体器件的涂层溶液、制造有机晶体管的方法、制造有机半导体薄膜的方法、用于非发光有机半导体器件的有机半导体薄膜以及制造有机半导体材料的方法。 (X代表氧原子、硫原子、硒原子或碲原子或NR5；Y和Z各自代表CR6、氧原子、硫原子、硒原子或氮原子或NR7；含有Y和Z的环是芳香杂环；R1和R2中的任一个与含有Y和Z的芳香杂环或R3和R4中的任一个与苯环可通过特定的二价连接基团相互键合；R1、R2 和 R5 至 R8 分别代表氢原子、烷基、烯基、炔基、芳基或杂芳基；R3 和 R4 分别代表烷基、烯基、炔基、芳基或杂芳基；m 和 n 分别为 0 至 2 的整数。）
• Microcrystalline organic semiconductor film, organic semiconductor transistor, and method of manufacturing organic semiconductor transistor
  申请人：FUJIFILM Corporation

  公开号：US10985327B2

  公开（公告）日：2021-04-20

  Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat. Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm. X, Y, and Z each independently represent a specific ring-constituting atom. R1 and R2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R3 and R4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

  本发明提供了一种有机半导体薄膜、一种由该有机半导体薄膜形成的有机半导体晶体管以及一种制造该有机半导体晶体管的方法。在有机半导体薄膜中，即使在有机半导体薄膜被图案化或暴露于高热的情况下，也能有效抑制裂纹的形成或传播。 本发明提供了一种有机半导体薄膜、由该有机半导体薄膜形成的有机半导体晶体管以及该有机半导体晶体管的制造方法。微晶有机半导体薄膜包括由下式(1)表示的化合物，该化合物的分子量为 3000 或更低，其晶域尺寸为 1 nm 至 100 nm。 X、Y 和 Z 各自独立地代表一个特定的成环原子。R1 和 R2 各自独立地代表氢原子、烷基、烯基、炔基、芳基或杂芳基。R3 和 R4 各自独立地代表卤原子、烷基、烯基、炔基、芳基或杂芳基。
• Efficient Isomer-Pure Synthesis of a Benzo[<i>b</i>]thiophene Analogue of Pentacene^,
  作者：Brigitte Wex、Bilal R. Kaafarani、Douglas C. Neckers

  DOI：10.1021/jo035769j

  日期：2004.3.1

  Isomer-pure thieno [3,2-f:4,5-f']bis [1]benzothiophene (2, n = 2) has been synthesized in an efficient four step approach without column chromatography.
• ORGANIC TRANSISTOR, COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, MATERIAL FOR ORGANIC TRANSISTOR, COATING SOLUTION FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ORGANIC TRANSISTOR, METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, AND METHOD FOR SYNTHESIZING ORGANIC SEMICONDUCTOR MATERIAL
  申请人：FUJIFILM Corporation

  公开号：US20170018724A1

  公开（公告）日：2017-01-19

  Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR 5 ; Y and Z each represents CR 6 , an oxygen, sulfur, selenium, or nitrogen atom, or NR 7 ; a ring containing Y and Z is an aromatic heterocycle; any one of R 1 and R 2 and the aromatic heterocycle containing Y and Z or any one of R 3 and R 4 and a benzene ring may be bonded to each other through a specific divalent linking group; R 1 , R 2 , and R 5 to R 8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R 3 and R 4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2.)