(2-氯苯基)甲基丙酸酯 | 7252-03-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: (2-氯苯基)甲基丙酸酯
• 英文名称: 2-chlorobenzyl propionate
• 英文别名: methyl (4-(2-chlorophenyl)-9-methyl-6H-thieno[3,2-f] [1,2,4]triazolo[4,3-a] [1,4]diazepin-2-yl)propionate；(2-Chlorophenyl)methyl propanoate
• CAS: 7252-03-1
• 化学式: C₁₀H₁₁ClO₂
• 分子量: 198.649
• InChiKey: LTIQEDLWOUYOFS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.7
• 重原子数：
  13
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.3
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  邻氯苄醇 、 丙酸 在 5,5'-dimethyl-3,3′-azoisooxazole 、 三苯基膦 作用下， 以 乙腈 为溶剂， 反应 9.5h， 以80%的产率得到(2-氯苯基)甲基丙酸酯
  参考文献：
  名称：

  5,5'-二甲基-3,3'-偶氮异恶唑是一种新型异质偶氮试剂，用于在Mitsunobu条件下进行酚的酯化和苄基醇的选择性酯化†

  摘要：

  5,5'-二甲基-3,3'-偶氮异恶唑通过Mitsunobu协议，它用作新型高效的异质偶氮试剂，用于伯和仲苄醇和酚与脂肪族和芳香族羧酸的高选择性酯化。该反应对伯苄醇与仲醇，脂族醇以及酚的选择性很高。这异恶唑肼 副产物可以简单地通过过滤分离，并循环到其中 偶氮异恶唑 通过氧化。

  DOI：

  10.1039/c004357e

文献信息

• METHOD FOR PRODUCING CARBOXYLIC ACID AMIDE
  申请人：Tomokawa Junichi

  公开号：US20130123505A1

  公开（公告）日：2013-05-16

  A carboxamide can be produced in a high yield by a method for producing a carboxamide, for example, represented by formula (4): (wherein R 1 and R 3 are as defined below), the method comprising a step of allowing a carboxylic acid ester represented by formula (1): (wherein R 1 represents an optionally substituented C 1 -C 20 hydrocarbon group or an optionally substituented C 3 -C 20 heterocyclic group, and R 2 represents an optionally substituented C 1 -C 20 hydrocarbon group), an amine represented by formula (2): R 3 —NH 2 (2) (wherein R 3 represents a hydrogen atom or an optionally substituented C 1 -C 20 hydrocarbon group), and a formamide compound represented by formula (3): (wherein R 3 is as defined above) to react in the presence of a metal alkoxide.

  通过一种生产羧酰胺的方法可以高产率生产羧酰胺，例如，如公式（4）所示的方法：（其中R1和R3如下定义），该方法包括允许由公式（1）表示的羧酸酯（其中R1表示可选取代的C1-C20烃基或可选取代的C3-C20杂环基，R2表示可选取代的C1-C20烃基），由公式（2）表示的胺：R3—NH2（2）（其中R3表示氢原子或可选取代的C1-C20烃基），以及由公式（3）表示的甲酰胺化合物（其中R3如上所定义）在金属烷氧化物存在下反应的步骤。
• Syngas Instead of Hydrogen Gas as a Reducing Agent─A Strategy To Improve the Selectivity and Efficiency of Organometallic Catalysts
  作者：Evgeniya Podyacheva、Oleg I. Afanasyev、Vladimir S. Ostrovskii、Denis Chusov

  DOI：10.1021/acscatal.2c01000

  日期：2022.5.6

  Catalytic reduction reactions play a major role in modern chemistry and are often based on hydrogen gas as a reducing agent. However, the high reactivity of hydrogen is often accompanied by low selectivity on the simple catalysts. Herein, we showed that the usage of syngas as a reducing agent can be a more efficient and selective strategy. Based on control experiments, a plausible mechanism was proposed

  催化还原反应在现代化学中发挥着重要作用，通常以氢气为还原剂。然而，氢气的高反应性往往伴随着对简单催化剂的低选择性。在这里，我们表明使用合成气作为还原剂可能是一种更有效和选择性的策略。基于对照实验，提出了一种合理的机制来解释合成气的优越性能。这种方法的多功能性通过成功应用于使用不同金属催化剂的三种反应来证明：直接还原胺化、还原酯化和串联 CH-还原烷基化-水解-脱羧。催化剂周转量达到 30,000。而且，
• Polymer for organic bottom anti-reflective coating and bottom anti-reflective coatings comprising the same
  申请人：SK Innovation Co., Ltd.

  公开号：US11435667B2

  公开（公告）日：2022-09-06

  Provided are a polymer for an organic bottom anti-reflective coating and a bottom anti-reflective coating composition containing the same. More specifically, provided are a polymer for an organic bottom anti-reflective coating capable of relieving reflection of exposure light and irradiation light on a substrate of a photoresist layer applied on the substrate in a lithographic process of manufacturing a semiconductor device, and a bottom anti-reflective coating composition containing the same.

  本发明提供了一种用于有机底部防反射涂层的聚合物和一种含有该聚合物的底部防反射涂层组合物。更具体地说，本发明提供了一种用于有机底部防反射涂层的聚合物，该聚合物能够缓解在制造半导体器件的光刻工艺中涂敷在基底上的光刻胶层的曝光光和照射光在基底上的反射，还提供了一种含有该聚合物的底部防反射涂层组合物。
• ORGANIC ANTI REFLECTIVE LAYER COMPOSITION
  申请人：KOREA KUMHO PETROCHEMICAL CO., LTD.

  公开号：US20130171565A1

  公开（公告）日：2013-07-04

  Disclosed is an organic antireflective film composition which includes a monomer containing two or more thiol groups and a monomer containing two or more vinyl groups, as crosslinking agents. When the organic antireflective film composition is used, an antireflective film formed from the composition can be rapidly etched in an ultrafine pattern forming process, and the curing rate can be increased, while the etching rate is increased, without using an acid generator and a curing agent or by using the agents only in small amounts.
• Polymer for Organic Bottom Anti-Reflective Coating and Bottom Anti-Reflective Coating Composition Containing the Same
  申请人：SK Innovation Co., Ltd.

  公开号：US20200264509A1

  公开（公告）日：2020-08-20

  Provided are a polymer for an organic bottom anti-reflective coating and a bottom anti-reflective coating composition containing the same. More specifically, provided are a polymer for an organic bottom anti-reflective coating capable of relieving reflection of exposure light and irradiation light on a substrate of a photoresist layer applied on the substrate in a lithographic process of manufacturing a semiconductor device, and a bottom anti-reflective coating composition containing the same.