A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.
一种用于形成优质
钽膜的组合物,该膜可作为电容器绝缘膜使用。用于形成
氧化钽薄膜的组合物,其中包含至少一种
钽化合物,该化合物选自由能与
氧化钽烷氧基化合物和
氧化钽烷氧基化合物反应的化合物的反应产物和该反应产物的
水解物以及溶剂组成的组,以及将该组合物涂在基底上并加热以形成
氧化钽薄膜的工艺。