戊烷-1,1,5,5-四醇 | 97890-17-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: 戊烷-1,1,5,5-四醇
• 中文别名: 双(2,3-环氧丙基)3,4,5,6-四氯邻苯二甲酸酯
• 英文名称: Bis(2,3-epoxypropyl) 3,4,5,6-tetrachlorophthalate
• 英文别名: bis(oxiran-2-ylmethyl) 3,4,5,6-tetrachlorobenzene-1,2-dicarboxylate
• CAS: 97890-17-0
• 化学式: C₁₄H₁₀Cl₄O₆
• 分子量: 416.0
• InChiKey: QSDWFFRGNSHCEP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.5
• 重原子数：
  24
• 可旋转键数：
  8
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.43
• 拓扑面积：
  77.7
• 氢给体数：
  0
• 氢受体数：
  6

反应信息

• 作为产物：
  描述：

  bis(3-chloro-2-hydroxypropyl) 3,4,5,6-tetrachlorobenzene-1,2-dicarboxylate 、 potassium carbonate 生成 戊烷-1,1,5,5-四醇
  参考文献：
  名称：

  GASANOV, G. M.;GUSEJNOV, M. M.;BABAEV, S. B., AZERB. XIM. ZH.,(1986) N 4, 60-64

  摘要：

  DOI：

文献信息

• ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP1757986A1

  公开（公告）日：2007-02-28

  There is provided an anti-reflective coating forming composition comprising a polymer having a pyrimidinetrione structure, imidazolidinedione structure, imidazolidinetrione structure or triazinetrione structure and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, and can use in lithography process by use of a light having a short wavelength such as ArF excimer laser beam (wavelength 193 nm) or F2 excimer laser beam (wavelength 157 nm), etc.

  本发明提供了一种抗反射涂层成型组合物，该组合物由具有嘧啶三酮结构、咪唑烷二酮结构、咪唑烷三酮结构或三嗪三酮结构的聚合物和溶剂组成。由该组合物制得的防反射涂层对反射光有很好的防止效果，不会与光刻胶混合，并可在光刻工艺中使用 ArF 准分子激光束（波长 193 nm）或 F2 准分子激光束（波长 157 nm）等短波长光。
• SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP1813987A1

  公开（公告）日：2007-08-01

  There is provided an anti-reflective coating forming composition for lithography comprising a polymer compound, a crosslinking compound, a crosslinking catalyst, a sulfonate compound and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, has a higher dry etching rate compared with photoresists, can form a photoresist pattern having no footing at the lower part, and can use in lithography process by use of a light such as ArF excimer laser beam and F2 excimer laser beam, etc.

  本发明提供了一种用于光刻的抗反射涂层形成组合物，该组合物由聚合物化合物、交联化合物、交联催化剂、磺酸盐化合物和溶剂组成。由该组合物制得的抗反射涂层对反射光有很好的防止效果，不会与光刻胶混合，与光刻胶相比具有更高的干蚀刻率，可以形成下部无基底的光刻胶图案，并可在光刻工艺中使用 ArF 准分子激光束和 F2 准分子激光束等光源。
• COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP1876495A1

  公开（公告）日：2008-01-09

  There is provided an anti-reflective coating forming composition for lithography comprising a polymer having an ethylenedicarbonyl structure and a solvent; an anti-reflective coating formed from the composition; and a method for forming photoresist pattern by use of the composition. The anti-reflective coating obtained from the composition can be used in lithography process for manufacturing a semiconductor device, has a high preventive effect for reflected light, causes no intermixing with photoresists, and has a higher etching rate than photoresists.

  本发明提供了一种光刻用抗反射涂层形成组合物，该组合物包含具有亚乙基二羰基结构的聚合物和溶剂；由该组合物形成的抗反射涂层；以及使用该组合物形成光刻胶图案的方法。由该组合物制得的抗反射涂层可用于制造半导体器件的光刻工艺中，对反射光有很好的防止效果，不会与光刻胶混合，而且蚀刻率高于光刻胶。
• GASANOV, G. M.;GUSEJNOV, M. M.;BABAEV, S. B., AZERB. XIM. ZH.,(1986) N 4, 60-64
  作者：GASANOV, G. M.、GUSEJNOV, M. M.、BABAEV, S. B.

  DOI：——

  日期：——
• ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER AND METHOD FOR FORMING PHOTORESIST PATTERN
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP1757986B1

  公开（公告）日：2014-05-14