Diphenylphosphane;sulfane

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Diphenylphosphane;sulfane
• 化学式: C12H13PS
• 分子量: 220.27
• InChiKey: LTDNZNHDJDPAOU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.43
• 重原子数：
  14
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  1
• 氢给体数：
  1
• 氢受体数：
  1

文献信息

• QUANTUM DOTS, PRODUCTION METHODS THEREOF, AND ELECTRONIC DEVICES INCLUDING THE SAME
  申请人：Samsung Electronics Co., Ltd.

  公开号：EP3168278A1

  公开（公告）日：2017-05-17

  A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1:          Chemical Formula 1     ABX3+α wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers

  一种具有过氧化物晶体结构的量子点，包括化学式 1 所代表的化合物： 化学式 1 ABX3+α 其中，A 是选自 Rb、Cs、Fr 和它们的组合的 IA 族金属，B 是选自 Si、Ge、Sn、Pb 和它们的组合的 IVA 族金属，X 是选自 F、Cl、Br 和 I、BF4 或它们的组合的卤素，α 大于 0 且小于或等于约 3；量子点的尺寸为约 1 纳米至约 50 纳米
• Quantum dots, production methods thereof, and electronic devices including the same
  申请人：Samsung Electronics Co., Ltd.

  公开号：US10585228B2

  公开（公告）日：2020-03-10

  An electronic device includes, a light source having a peak emission at a wavelength between about 440 nm to about 480 nm; and a photoconversion layer disposed on the light source, wherein the photoconversion layer includes a first quantum dot which emits red light and a second quantum dot which emits green light, wherein at least one of the first quantum dot and the second quantum dot has a perovskite crystal structure and includes a compound represented by Chemical Formula 1: AB′X3+α  Chemical Formula 1 wherein A is a Group IA metal, NR4+, or a combination thereof, B′ is a Group IVA metal, X is a halogen, BF4−, or a combination thereof, and α is 0 to 3.

  一种电子设备包括：光源，其峰值发射波长介于约 440 纳米到约 480 纳米之间；以及光源上的光电转换层、 其中，光电转换层包括发射红光的第一量子点和发射绿光的第二量子点、 其中第一量子点和第二量子点中的至少一个具有过氧化物晶体结构，并包括化学式 1 所代表的化合物： AB′X3+α 化学式 1 其中 A 为 IA 族金属、NR4+ 或其组合，B′ 为 IVA 族金属，X 为卤素、BF4- 或其组合，α 为 0 至 3。
• Capped co-doped core/shell nanocrystals for visible light emission
  申请人：The Regents of the University of California

  公开号：US11142692B2

  公开（公告）日：2021-10-12

  In various embodiments the present disclosure provides a core/shell nanocrystal comprising a core and a shell formed on the core, wherein the core/shell nanocrystal is co-doped with at least one metal dopant and at least one trivalent cation. In some embodiments, the trivalent cation is a Group 13 element. Methods of making and using the core/shell nanocrystal are also described.

  在各种实施方案中，本公开提供了一种核/壳纳米晶体，它包括核和形成在核上的壳，其中核/壳纳米晶体共掺有至少一种金属掺杂剂和至少一种三价阳离子。在某些实施例中，三价阳离子是第 13 族元素。还描述了制造和使用核/壳纳米晶体的方法。
• [EN] NANOCRYSTALLINE PREPARATION METHOD, NANOCRYSTALLINE, AND OPTICAL FILM AND LIGHT EMITTING DEVICE CONTAINING SAME<br/>[FR] PROCÉDÉ DE PRÉPARATION DE NANOCRISTAUX, NANOCRISTAUX ET FILM OPTIQUE ET DISPOSITIF ÉLECTROLUMINESCENT LES CONTENANT<br/>[ZH] 纳米晶的制备方法、纳米晶及含其的光学膜、发光器件
  申请人：NAJING TECH CORP LTD

  公开号：WO2022017464A1

  公开（公告）日：2022-01-27

  本公开提供了一种纳米晶、制备方法及组合物、光学膜、发光器件。该纳米晶包括初始纳米晶和包覆于初始纳米晶外的牺牲壳层，牺牲壳层包括以初始纳米晶为中心向外依次包覆的n个牺牲子层，n个牺牲子层的材料相同或不同；如果对所述纳米晶进行刻蚀，至少部分牺牲壳层在刻蚀过程中被逐渐消耗，在刻蚀过程中测定m次的荧光发射波长、半峰宽、量子产率和在一定波长激发光激发下的吸光度，则0≤MAXPL-MINPL≤10nm，0≤MAXFWHM-MINFWHM≤10nm，80％≤MINQY/MAXQY≤100％，80％≤MINAB/MAXAB≤100％，其中，n、m各自为大于等于1的整数。
• CO-DOPED CORE/SHELL NANOCRYSTALS FOR VISIBLE LIGHT EMISSION
  申请人：The Regents of the University of California

  公开号：US20180216003A1

  公开（公告）日：2018-08-02

  In various embodiments the present disclosure provides a core/shell nanocrystal comprising a core and a shell formed on the core, wherein the core/shell nanocrystal is co-doped with at least one metal dopant and at least one trivalent cation. In some embodiments, the trivalent cation is a Group 13 element. Methods of making and using the core/shell nanocrystal are also described.