申请人:Shin-Etsu Chemical Co., Ltd.
公开号:US06338931B1
公开(公告)日:2002-01-15
A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of the formula (1):
wherein R1 is C1-10 alkyl or C6-14 aryl, R2 is C1-6 alkyl, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is an integer of 0 to 4, q is an integer of 1 to 5, 1≦p+q≦5, n is 1 or 2, m is 0 or 1, and n+m=2. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.
一种化学放大型光阻组合物包含一种磺酰基重氮甲烷化合物作为光酸发生剂,其化学式为(1):其中R1为C1-10烷基或C6-14芳基,R2为C1-6烷基,G为SO2或CO,R3为C1-10烷基或C6-14芳基,p为0至4的整数,q为1至5的整数,1≤p+q≤5,n为1或2,m为0或1,且n+m=2。该组合物适用于微纳加工,特别是深紫外光刻,因为具有许多优点,包括提高分辨率,即使在长期PED上也可以最小化线宽变化或形状退化,涂覆、显影和剥离后最小化碎片,并提高开发后的图案轮廓。