1,3-diiodo-2-methylbenzene | 89795-47-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 1,3-diiodo-2-methylbenzene
• 英文别名: 1,5-diiodo-2-methylbenzene；2,6-diiodo-toluene；2,6-Dijod-toluol；2,6-Diiod-toluol
• CAS: 89795-47-1
• 化学式: C₇H₆I₂
• 分子量: 343.934
• InChiKey: VGCCLIASJONNRL-UHFFFAOYSA-N

物化性质

• 沸点：
  299.5±20.0 °C(Predicted)
• 密度：
  2.295±0.06 g/cm3(Predicted)
• 保留指数：
  1536.7

计算性质

• 辛醇/水分配系数(LogP)：
  3.6
• 重原子数：
  9
• 可旋转键数：
  0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.14
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为产物：
  描述：

  2-氨基-6-碘甲苯 生成 1,3-diiodo-2-methylbenzene
  参考文献：
  名称：

  Cohen; Miller, Journal of the Chemical Society, 1904, vol. 85, p. 1627

  摘要：

  DOI：

文献信息

• A Simple and Efficient Two-Step Synthesis of 1,2,3-Triiodoarenes via Consecutive C–H Iodination/ipso-Iododecarboxylation Strategy: A Potential Application towards ortho-Diiodoarenes by Regioselective Metal–Iodine Exchange Reaction
  作者：Raed M. Al-Zoubi、Hussein Al-Mughaid、Robert McDonald

  DOI：10.1071/ch14386

  日期：——

  A general, robust, and efficient method for the conversion of benzoic acids to 1,2,3-triiodoarenes and 1,2,3-trihaloarenes via a two-step synthesis is reported. Commercially available benzoic acids were used that can allow the reactions to be performed on multi-gram scales with good-to-excellent yields. This report discloses a practical method for the synthesis of 1,2,3-triiodoarenes and 1,2,3-trihaloarenes that is general in scope, scalable, and easy to workup and purify. A potential application of the target compounds as precursors for novel regioselective metal–iodine exchange reaction of 1,2,3-triiodoarenes was also demonstrated. It provided ortho-diiodoaryl derivatives in a high regioselective fashion that are useful intermediates in synthesis and indeed are hard to synthesize by any other means.

  本报告介绍了一种通过两步合成法将苯甲酸转化为 1,2,3-三碘烯烃和 1,2,3-三卤烯烃的通用、稳健而高效的方法。所使用的苯甲酸均可从市场上买到，因此可在多克的规模上进行反应，且收率良好。本报告揭示了一种合成 1,2,3-三碘烯烃和 1,2,3-三卤烯烃的实用方法，该方法具有通用性、可扩展性、易于操作和纯化。此外，还展示了目标化合物作为前体用于 1,2,3-三碘烯烃的新型区域选择性金属-碘交换反应的潜力。它以高区域选择性的方式提供了正二碘芳基衍生物，这些衍生物是有用的合成中间体，实际上很难通过其他方法合成。
• SUBSTITUTED BIS(TRIFLUOROVINYL)BENZENE COMPOUND
  申请人：TOSOH FINECHEM CORPORATION

  公开号：US20200017429A1

  公开（公告）日：2020-01-16

  There is provided a substituted bis(trifluorovinyl)benzene compound that is excellent in heat stability and is industrially useful, and a method for producing the same. There are used a substituted bis(trifluorovinyl)benzene compound represented by general formula (1); and a method for producing a substituted bis(trifluorovinyl)benzene compound, comprising the step of reacting in the presence of a catalyst (such as palladium) a bishalobenzene derivative represented by general formula (3) and a compound obtained by reacting 1,1,1,2-tetrafluoroethane, a zinc halide, and an organolithium compound and represented by general formula (4), to thereby obtain a substituted bis(trifluorovinyl)benzene compound represented by general formula (1).

  提供了一种替代的双(三氟乙烯基)苯化合物，其在热稳定性方面表现出色，具有工业上的用途，以及一种生产该化合物的方法。使用一种由通式(1)表示的替代的双(三氟乙烯基)苯化合物；以及一种生产替代的双(三氟乙烯基)苯化合物的方法，包括在催化剂(例如钯)的存在下反应由通式(3)表示的双卤苯衍生物和由通式(4)表示的通过反应1,1,1,2-四氟乙烷、锌卤化物和有机锂化合物得到的化合物，从而获得由通式(1)表示的替代的双(三氟乙烯基)苯化合物。
• Composition for film formation and material for insulating film formation
  申请人：JSR CORPORATION

  公开号：US20020172652A1

  公开（公告）日：2002-11-21

  A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly (arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.

  一种用于制备薄膜的组合物，能够形成具有低介电常数特性、抗开裂性、弹性模量和对基底的附着力优异的涂层膜，并可用作半导体器件中的层间绝缘膜材料等。该制膜组合物包含（A）至少一种选自芳香族聚芳烃和芳香族聚（芳烃醚）的成员，（B）聚乙烯基硅氧烷和（C）有机溶剂。
• LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1679184A1

  公开（公告）日：2006-07-12

  A laminate having a low relative dielectric constant and exhibiting excellent adhesion, a method of forming the laminate, an insulating film, a semiconductor device, and a film-forming composition are provided. A laminate according to the invention includes: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming a laminate according to the invention includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

  本发明提供了一种具有低相对介电常数并表现出优异附着力的层压板、一种形成该层压板的方法、一种绝缘膜、一种半导体器件和一种成膜组合物。 根据本发明的层压板包括：第一硅基薄膜；第二硅基薄膜；以及有机薄膜，其中第二硅基薄膜包括含有碳碳双键或碳碳三键的一价有机基团。 根据本发明形成层压板的方法包括：在基底上形成第一硅基薄膜的第一涂层；在第一涂层上形成第二硅基薄膜的第二涂层，第二涂层包括含有碳碳双键或碳碳三键的一价有机基团；在第二涂层上形成有机薄膜的第三涂层；以及固化包括第一至第三涂层的多层薄膜。
• INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1696478A1

  公开（公告）日：2006-08-30

  The invention provides a method of forming an insulating film which exhibits resistance against processing such as RIE used when forming a dual-damascene structure while maintaining a low relative dielectric constant of a polysiloxane insulating film. A polysiloxane insulating film is formed on a substrate by hydrolysis and condensation of a silane compound. A solution obtained by dissolving a polycarbosilane compound shown by the following general formula in a solvent is applied to the polysiloxane insulating film, and the resulting coating is heated to form a polycarbosilane insulating film. An organic insulating film is then formed on the polycarbosilane insulating film.

  本发明提供了一种形成绝缘膜的方法，这种绝缘膜既能抵抗在形成双大马士革结构时使用的 RIE 等加工，又能保持聚硅氧烷绝缘膜较低的相对介电常数。聚硅氧烷绝缘膜是通过硅烷化合物的水解和缩合作用在基材上形成的。将下表通式所示的聚碳硅烷化合物溶解在溶剂中得到的溶液涂抹在聚硅氧烷绝缘膜上，然后加热涂层，形成聚碳硅烷绝缘膜。 然后在聚碳硅烷绝缘膜上形成有机绝缘膜。