Single vibronic level emission spectroscopic studies of the ground state energy levels and molecular structures of jet-cooled HGeBr, DGeBr, HGeI, and DGeI
作者:Brandon S. Tackett、Yunjing Li、Dennis J. Clouthier、Kezia L. Pacheco、G. Alan Schick、Richard H. Judge
DOI:10.1063/1.2355496
日期:2006.9.21
Single vibronic level dispersed fluorescence spectra of jet-cooled HGeBr, DGeBr, HGeI, and DGeI have been obtained by laser excitation of selected bands of the A (1)A(")-X (1)A(') electronic transition. The measured ground state vibrational intervals were assigned and fitted to anharmonicity expressions, which allowed the harmonic frequencies to be determined for both isotopomers. In some cases, lack
将基态有效旋转常数和力场数据组合起来,以计算平均值(r(z))和近似平衡(r(e)(z))结构。对于HGeBr r(e)(z)(GeH)= 1.593(9)A,r(e)(z)(GeBr)= 2.325(21)A,键角固定为CCSD(T)/ aug -cc-pVTZ的从头算值是93.6度。对于HGeI,我们获得了r(e)(z)(GeH)= 1.589(1)A,r(e)(z)(GeI)= 2.525(5)A和键角= 93.2度。使用从头开始的笛卡尔位移坐标对发射光谱进行Franck-Condon模拟,可以令人满意地重现观察到的强度分布。基于卤素取代基的电负性,可以容易地理解卤代亚甲基和卤代亚甲硅烷基中的结构参数的趋势。结合角固定在我们的CCSD(T)/ aug-cc-pVTZ从头算值93.6度。对于HGeI,我们获得了r(e)(z)(GeH)= 1.589(1)A,r(e)(z)(GeI)= 2