申请人:Advanced Technology Materials, Inc.
公开号:US05312983A1
公开(公告)日:1994-05-17
Novel tellurium compounds of the present invention have the formula: TeR.sup.1 R.sup.2 wherein R.sup.1 is a fluorinated alkyl having the formula C.sub.n F.sub.(2n+1)-x H.sub.x where n may range from 1 to 6 and x may range from 0 to 2n, and R.sup.2 is selected from the group consisting of alkyls having 2 to 6 carbon atoms, cycloalkyls having 3 to 6 carbon atoms, allyl, alkyl-substituted allyl having 4 to 6 carbon atoms, cyclopentadienyl, benzyl, alpha-methylbenzyl, and bis(alpha-methyl)benzyl. The novel tellurium reagents are useful as sources for organometallic vapor deposition processes, particularly the MOCVD fabrication of II-VI semiconductor materials such as Hg.sub.x Cd.sub.1-x Te. The compounds are synthesized by high yield ligand exchange reactions between Te(R.sup.1).sub.2 and Te(R.sup.2).sub.2.
本发明的新型碲化合物的化学式为:TeR.sup.1 R.sup.2,其中R.sup.1是一种氟化烷基,其化学式为C.sub.n F.sub.(2n+1)-x H.sub.x,其中n可以在1到6之间变化,x可以在0到2n之间变化;而R.sup.2则从以下组中选择:碳数为2到6的烷基、碳数为3到6的环烷基、烯丙基、碳数为4到6的烷基取代烯丙基、环戊二烯基、苄基、α-甲基苄基和双(α-甲基)苄基。这些新型碲试剂可用作有机金属气相沉积过程的来源,特别是II-VI半导体材料(如Hg.sub.x Cd.sub.1-x Te)的MOCVD制造。这些化合物是通过Te(R.sup.1).sub.2和Te(R.sup.2).sub.2之间的高收率配体交换反应合成的。