Birhodanines and their sulfur analogues for air-stable n-channel organic transistors
作者:Kodai Iijima、Yann Le Gal、Toshiki Higashino、Dominique Lorcy、Takehiko Mori
DOI:10.1039/c7tc02886e
日期:——
A series of thin-film n-channel organic field-effect transistors based on various birhodanines, 3,3′-dialkyl-5,5′-bithiazolidinylidene-2,2′-dione-4,4′-dithiones (OS-R) and their sulfur analogues, 3,3′-dialkyl-5,5′-bithiazolidinylidene-2,4,2′,4′-tetrathiones (SS-R) are studied. The SS-R compounds have tilted stacking crystal structures, whereas the OS-R compounds show basically herringbone structures
一系列基于各种二茂丹宁,3,3'-二烷基-5,5'-bithiazolidinylidene-2,2'-dione-4,4'-dithiones的薄膜n沟道有机场效应晶体管(OS - R)及其硫类似物3,3'-二烷基-5,5'-噻唑烷亚基-2,4,2',4'-四硫酮(SS - R)进行了研究。的SS- ř化合物已倾斜堆叠的晶体结构,而OS- ř化合物显示基本上人字形结构。烷基链的R长度和分子间的S–S相互作用影响分子堆积,从而在薄膜晶体管中实现出色的长期空气稳定性。