Electronic effects and mechanistic features in the rearrangement-displacement reactions of aryl(chloromethyl)diphenylsilanes with fluoride ion
作者:Steve L Aprahamian、Harold Shechter
DOI:10.1016/s0040-4039(00)88733-x
日期:1990.1
At 25°C aryl migrations from negatively-charged pentacoordinate silicon correlate with the abilities of the rearranging groups to bear negative charge, but at lower temperatures the migrations become less dependent on electron-withdrawing stabilization.