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2-(toluene-4-sulfonyloxy)-norbornane | 94112-67-1

中文名称
——
中文别名
——
英文名称
2-(toluene-4-sulfonyloxy)-norbornane
英文别名
Norbornyl-p-toluolsulfonsaeureester-(2);p-Toluolsulfonat von 2-endo-Norbornanol;p-Toluolsulfonat von 2-exo-Norbornanol;endo-2-Norbornyl-tosylat;exo-2-Norbornyl-tosylat;endo-Norbornyltosylat;Bicyclo[2.2.1]hept-2-yl 4-methylbenzenesulfonate;2-bicyclo[2.2.1]heptanyl 4-methylbenzenesulfonate
2-(toluene-4-sulfonyloxy)-norbornane化学式
CAS
94112-67-1
化学式
C14H18O3S
mdl
——
分子量
266.361
InChiKey
WXFFQUSIUXVKSU-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 熔点:
    60.6-62 °C
  • 沸点:
    399.3±11.0 °C(Predicted)
  • 密度:
    1.26±0.1 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    3.3
  • 重原子数:
    18
  • 可旋转键数:
    3
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.57
  • 拓扑面积:
    51.8
  • 氢给体数:
    0
  • 氢受体数:
    3

文献信息

  • Polymer for Preparing Resist Underlayer Film, Resist Underlayer Film Composition Containing the Polymer and Method for Forming Resist Underlayer Film Using the Composition
    申请人:SK Innovation Co., Ltd.
    公开号:US20160311975A1
    公开(公告)日:2016-10-27
    Provided are a fluoreneol-based monomer, a polymer for preparing a resist underlayer film obtained therefrom, a resist underlayer film composition containing the polymer, and a method for forming a resist underlayer film using the resist underlayer film composition, wherein the fluoreneol-based monomer is represented by Chemical Formula 2 below:
    提供了一种基于芴醇的单体,用于制备抗蚀底层膜的聚合物,包含该聚合物的抗蚀底层膜组合物,以及使用该抗蚀底层膜组合物形成抗蚀底层膜的方法。其中,基于芴醇的单体由以下化学式2表示:
  • Polymer for preparing resist underlayer film, resist underlayer film composition containing the polymer and method for manufacturing semiconductor device using the composition
    申请人:SK Innovation Co., Ltd.
    公开号:US10227450B2
    公开(公告)日:2019-03-12
    Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity and planarization characteristics, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.
    本发明提供了一种用于半导体和显示器制造工艺的聚合物、一种含有该聚合物的用于半导体和显示器制造工艺的抗蚀剂底层薄膜组合物,以及一种使用该组合物制造半导体器件的方法,更具体地说,本发明公开的聚合物同时具有优化的蚀刻选择性和平面化特性,因此含有该聚合物的抗蚀剂底层薄膜组合物可用作多层半导体光刻工艺的硬掩模。
  • Polymer for organic bottom anti-reflective coating and bottom anti-reflective coatings comprising the same
    申请人:SK Innovation Co., Ltd.
    公开号:US11435667B2
    公开(公告)日:2022-09-06
    Provided are a polymer for an organic bottom anti-reflective coating and a bottom anti-reflective coating composition containing the same. More specifically, provided are a polymer for an organic bottom anti-reflective coating capable of relieving reflection of exposure light and irradiation light on a substrate of a photoresist layer applied on the substrate in a lithographic process of manufacturing a semiconductor device, and a bottom anti-reflective coating composition containing the same.
    本发明提供了一种用于有机底部防反射涂层的聚合物和一种含有该聚合物的底部防反射涂层组合物。更具体地说,本发明提供了一种用于有机底部防反射涂层的聚合物,该聚合物能够缓解在制造半导体器件的光刻工艺中涂敷在基底上的光刻胶层的曝光光和照射光在基底上的反射,还提供了一种含有该聚合物的底部防反射涂层组合物。
  • Copolymer and composition for organic and antireflective layer
    申请人:Kim Myung-Woong
    公开号:US20080318167A1
    公开(公告)日:2008-12-25
    The present invention provides an organic anti-reflection coating composition comprising a copolymer represented by the following Formula 1, a light absorbent, a thermal acid generating agent, and a curing agent: wherein R 1 , R 2 and R 3 are each independent to each; R 1 represents hydrogen or an alkyl group having 1 to 10 carbon atoms; R 2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms or an arylalkyl group having 1 to 20 carbon atoms; R 3 is hydrogen or a methyl group; m and n are repeating units in the main chain, while m+n=1, and they have values of 0.05
  • COPOLYMER FOR ORGANIC ANTIREFLECTIVE FILM, MONOMER, AND COMPOSITION COMPRISING THE COPOLYMER
    申请人:Lee Jin Han
    公开号:US20120296059A1
    公开(公告)日:2012-11-22
    Disclosed are a copolymer for organic antireflective films containing a repeating unit represented by the following formula (1), a monomer for the copolymer, and an organic antireflective film composition including the copolymer: wherein in the formula (1), R 1 , R 2 , R 3 , A, m and n respectively have the same meanings as defined in the detailed description of the invention. The organic antireflective film composition including the copolymer for organic antireflective films has an increased refractive index and exhibits excellent effects when produced into an antireflective film, and hydrophilicity and hydrophobicity of the coating film produced from the composition can be regulated, so that excellent compatibility with resists can be obtained.
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