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2-Bromo-6-(diethoxyphosphorylmethyl)naphthalene | 1093403-10-1

中文名称
——
中文别名
——
英文名称
2-Bromo-6-(diethoxyphosphorylmethyl)naphthalene
英文别名
——
2-Bromo-6-(diethoxyphosphorylmethyl)naphthalene化学式
CAS
1093403-10-1
化学式
C15H18BrO3P
mdl
——
分子量
357.184
InChiKey
IZOWQQNQGAGLIU-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.6
  • 重原子数:
    20
  • 可旋转键数:
    6
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.33
  • 拓扑面积:
    35.5
  • 氢给体数:
    0
  • 氢受体数:
    3

反应信息

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文献信息

  • AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME
    申请人:Funahashi Masakazu
    公开号:US20100187511A1
    公开(公告)日:2010-07-29
    An aromatic amine derivative having ring structures on the both sides of central double bond structure, an organic electroluminescence device including the aromatic amine derivative, and an organic electroluminescence material-containing solution including the aromatic amine derivative as one of organic electroluminescence materials and a solvent, the organic electroluminescence device having a long lifetime and high luminous efficiency and being capable of emitting blue light having a high color purity, and being realized with the aromatic amine derivative and the organic electroluminescence material-containing solution.
  • ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT- EMITTING TRANSISTOR
    申请人:Nakano Yuki
    公开号:US20100187514A1
    公开(公告)日:2010-07-29
    An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the foregoing organic semiconductor layer includes a specified organic compound having an aromatic hydrocarbon group or an aromatic heterocyclic group and an acetylene structure in the center thereof; an organic thin film light emitting transistor in which in the organic thin film transistor, light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode; an organic thin film transistor which is made high with respect to the response speed and has a large ON/OFF ratio by a compound suitable therefor; and an organic film light emitting transistor utilizing it, and a compound suitable therefor, are provided.
  • EP2159217
    申请人:——
    公开号:——
    公开(公告)日:——
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