The present invention is to provide a gas barrier film which has a high barrier property, excellent bending resistance and smoothness and suitability for cutting process, a manufacturing method for the same, and an electronic device using the gas barrier film.
A gas barrier film having a base, a first barrier layer formed on the surface of the base by a vapor growth method, a second barrier layer formed by a conversion treatment of a coating film formed by coating the surface of the first barrier layer with a first silicon compound, and a protective layer having no barrier property which is formed by a conversion treatment of a coating film formed by coating the surface of the second barrier layer with a second silicon compound.
本发明旨在提供一种具有高阻隔性、优异的抗弯曲性和平滑性且适用于切割工艺的气体阻隔薄膜、其制造方法以及使用该气体阻隔薄膜的电子设备。
气体阻挡层薄膜具有基底、通过气相生长法在基底表面形成的第一阻挡层、通过对在第一阻挡层表面涂覆第一
硅化合物而形成的涂膜进行转换处理而形成的第二阻挡层,以及通过对在第二阻挡层表面涂覆第二
硅化合物而形成的涂膜进行转换处理而形成的无阻挡特性的保护层。