5,5''-bis(5-hexyl-2-thienylethynyl)-[2,2':5',2'']-terthiophene | 710338-93-5

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 双噻吩和低聚噻吩
• 英文名称: 5,5''-bis(5-hexyl-2-thienylethynyl)-[2,2':5',2'']-terthiophene
• 英文别名: 2,2':5',2''-Terthiophene, 5,5''-bis[(5-hexyl-2-thienyl)ethynyl]-；2,5-bis[5-[2-(5-hexylthiophen-2-yl)ethynyl]thiophen-2-yl]thiophene
• CAS: 710338-93-5
• 化学式: C₃₆H₃₆S₅
• 分子量: 629.012
• InChiKey: ZALDFAZJRFAINY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  13.5
• 重原子数：
  41
• 可旋转键数：
  16
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  141
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  2-正己基噻吩 在 N-溴代丁二酰亚胺(NBS) 、 copper(l) iodide 、 四(三苯基膦)钯 、 四丁基氟化铵 、 N,N-二异丙基乙胺 作用下， 以 四氢呋喃 为溶剂， 反应 18.08h， 生成 5,5''-bis(5-hexyl-2-thienylethynyl)-[2,2':5',2'']-terthiophene
  参考文献：
  名称：

  Large Area Liquid Crystal Monodomain Field-Effect Transistors

  摘要：

  Butyl, hexyl, and decyl derivatives of the liquid-crystal line organic semiconductor 5,5 double prime -bis(5alkyl-2-thienylethynyl)-2,2':5',2double prime -terthiophene were synthesized and studied with respect to their structural, optical, and electrical properties. By means of an optimized thermal annealing scheme the hexyl and decyl compounds could be processed into self-assembled monodomain films of up to 150 mm in diameter. These were investigated with X-ray diffractometry, which revealed a clearly single-crystalline monoclinic morphology with lamellae parallel to the substrate. Within the lamellae the molecules were found to arrange with a tilt of about 50 degrees with the rubbing direction of the polyimide alignment layer. The resulting, close side-to-side packing was confirmed by measurements of the UV/vis absorption, which showed a dichroic ratio of 19 and indicated H-aggregation. AFM analyses revealed self-affinity in the surface roughness of the monodomain. The compounds showed bipolar charge transport in TOF measurements, with hole mobilities reaching up to 0.02 cm(2)/Vs and maximum electron mobilities around 0.002 cm(2)/Vs. The hexyl derivative was processed into large-area monodomain top-gate field-effect transistors, which were stable for months and showed anisotropic hole mobilities of up to 0.02 cm(2)/Vs. Compared to multidomain bottom-gate transistors the monodomain formation allowed for a mobility increase by 1 order of magnitude.

  DOI：

  10.1021/ja055337l

文献信息

• SMECTIC LIQUID CRYSTAL COMPOUND
  申请人：Funahashi Masahiro

  公开号：US20100237327A1

  公开（公告）日：2010-09-23

  According to the present invention, a liquid crystal semiconductor capable of exhibiting a highly ordered smectic phase at approximately room temperature, being used for formation of a smectic liquid crystal thin film that is stable at room temperature by a solution process, and showing excellent ambipolar charge-transporting properties, a thin film transistor comprising the same, and the like are provided. Also, the following are provided: a smectic liquid crystal compound represented by the following general formula (1) wherein R 1 represents a straight-chain alkyl group having 1 to 8 carbon atoms, R 2 represents an alkyl or alkoxy group having 1 to 8 carbon atoms, and “n” is an integer of 0 to 3; an ambipolar charge-transporting material comprising the smectic liquid crystal compound; an organic semiconductor thin film having a thin film layer comprising the smectic liquid crystal compound; and a thin film transistor comprising the organic semiconductor thin film.

  根据本发明，提供了一种液晶半导体，能够在近似室温时表现出高度有序的蜡状相，通过溶液法形成在室温下稳定的蜡状液晶薄膜，并显示出优异的双极性电荷传输特性，以及包括它的薄膜晶体管等。此外，还提供以下内容：由下列通式（1）表示的蜡状液晶化合物，其中R1表示具有1至8个碳原子的直链烷基，R2表示具有1至8个碳原子的烷基或烷氧基，“n”是0至3的整数；包括蜡状液晶化合物的双极性电荷传输材料；具有包括蜡状液晶化合物的薄膜层的有机半导体薄膜；以及包括有机半导体薄膜的薄膜晶体管。
• Electronic Device
  申请人：Van Breemen Albert Jose Jan Marie

  公开号：US20080164465A1

  公开（公告）日：2008-07-10

  The electronic device comprises an organic semiconductor material in a monodomain structure on a substrate. Said semiconductor material is preferably part of a transistor, wherein the monodomain extends on the channel, i.e. from a source to a drain electrode. The material comprises a mesogenic unit with spacer groups and end groups. The end groups are preferably reactive, i.e. dienes, acrylates, oxetanes or the like. The mesogenic unit contains a central oligothiophenyl-group, rigid spacer groups, particularly acetylenes, and additional groups, for instance thiophenyl or phenyl.
• US7915609B2
  申请人：——

  公开号：US7915609B2

  公开（公告）日：2011-03-29
• Large Area Liquid Crystal Monodomain Field-Effect Transistors
  作者：Albert J. J. M. van Breemen、Peter T. Herwig、Ceciel H. T. Chlon、Jörgen Sweelssen、Herman F. M. Schoo、Sepas Setayesh、Willie M. Hardeman、Christian A. Martin、Dago M. de Leeuw、Josué J. P. Valeton、Cees W. M. Bastiaansen、Dirk J. Broer、Andreea R. Popa-Merticaru、Stefan C. J. Meskers

  DOI：10.1021/ja055337l

  日期：2006.2.1

  Butyl, hexyl, and decyl derivatives of the liquid-crystal line organic semiconductor 5,5 double prime -bis(5alkyl-2-thienylethynyl)-2,2':5',2double prime -terthiophene were synthesized and studied with respect to their structural, optical, and electrical properties. By means of an optimized thermal annealing scheme the hexyl and decyl compounds could be processed into self-assembled monodomain films of up to 150 mm in diameter. These were investigated with X-ray diffractometry, which revealed a clearly single-crystalline monoclinic morphology with lamellae parallel to the substrate. Within the lamellae the molecules were found to arrange with a tilt of about 50 degrees with the rubbing direction of the polyimide alignment layer. The resulting, close side-to-side packing was confirmed by measurements of the UV/vis absorption, which showed a dichroic ratio of 19 and indicated H-aggregation. AFM analyses revealed self-affinity in the surface roughness of the monodomain. The compounds showed bipolar charge transport in TOF measurements, with hole mobilities reaching up to 0.02 cm(2)/Vs and maximum electron mobilities around 0.002 cm(2)/Vs. The hexyl derivative was processed into large-area monodomain top-gate field-effect transistors, which were stable for months and showed anisotropic hole mobilities of up to 0.02 cm(2)/Vs. Compared to multidomain bottom-gate transistors the monodomain formation allowed for a mobility increase by 1 order of magnitude.