3-(2-氨基乙胺基)-2-甲基丙腈 | 22584-32-3

• 分子结构分类: 有机化合物 - 有机氮化合物
• 中文名称: 3-(2-氨基乙胺基)-2-甲基丙腈
• 英文名称: N-(2-methyl-2-cyanethyl)-ethylendiamin
• 英文别名: 3-[(2-Aminoethyl)amino]-2-methylpropanenitrile；3-(2-aminoethylamino)-2-methylpropanenitrile
• CAS: 22584-32-3
• 化学式: C₆H₁₃N₃
• 分子量: 127.189
• InChiKey: HWJSDSLWRKEWOL-UHFFFAOYSA-N

物化性质

• 沸点：
  77 °C(Press: 0.2 Torr)
• 密度：
  0.950±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  -0.9
• 重原子数：
  9
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.83
• 拓扑面积：
  61.8
• 氢给体数：
  2
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  3-(2-氨基乙胺基)-2-甲基丙腈 在 silica gel 、 镍 氢气 作用下， 以 叔丁醇 为溶剂， 生成 N-(2'-Aminoethyl)-2-methyl-propandiamin-(1,3)
  参考文献：
  名称：

  A Novel Synthesis of Homopiperazine and Its Monomethyl Derivatives

  摘要：

  DOI：

  10.1021/jo01060a031
• 作为产物：
  描述：

  乙二胺 、 甲基丙烯腈 生成 3-(2-氨基乙胺基)-2-甲基丙腈
  参考文献：
  名称：

  A Novel Synthesis of Homopiperazine and Its Monomethyl Derivatives

  摘要：

  DOI：

  10.1021/jo01060a031

文献信息

• Salts of alkylenebisdithiocarbamic acid derivatives, processes for their preparation, fungicidal compositions containing them and methods of combating fungi
  申请人：TOKYO ORGANIC CHEMICAL INDUSTRIES, LTD.

  公开号：EP0037861A1

  公开（公告）日：1981-10-21

  Salts of alkylenebisdithiocarbamic acid derivatives, processes for their preparation, fungicidal compositions containing tham and methods of combating fungi. Novel compounds are provided which exhibit activity as fungicides. The novel compounds are salts of an al- kylenebisdithiocarbomic acid of the formula: wherein X is alkylene group having 2 to 6 carbon atoms; Y and Y', which may be the same or different each represents (1) hydrogen except that both Y and Y' cannot be hydrogen; (2) (C6-C20)alkyl: (3) a grouo of the formula in which R is hydrogen or (C1-C6)alkyl, R, is hydrogen, (C1-C18)alkyl, (C2-C8)alkenyl, (C3-C6)alkynyl, phenyl or phenyl substituted with up to three of the same or different substituents selected from (C1-C4)alkyl and halo, and m is 0, 1 or 2 ; (4) a group of the formula where R2 is hydrogen, halo or (C1-C18)alkyl, n is 1 or 2. and p is 0, 1, 2 or 3; (5) a group of the formula where R is as above defined, R3 is hydrogen, hydroxy or (C,-C6)-alkyl and R4 is (C1-C18)alkyl, (C1-C6)alkylamino(C1-C6)-alkyl, di(C1-C6)alkylamino(C1-C6)alkyl, (C2-C8)alkenyl, (C3-C6)alkynyl, hydroxy(C1-C6)alkyl or a saltforming group or atom, and g is 0 or 1; (6) a group of the formula where R, R3 and q are as above defined; (7) a group of the formula -(CHR)q-CHR3CONH2 where R, R3 and q are as above defined; (8) a salt of a thio acid group of the formula where R, R3 and m are as above defined; (9) a group of the formula-CHR-CHR2SH-, or a metal salt thereof, where R and R2 are as above defined, or a -(CH2)2-NH2 or ,-(CH2)2-NH-(CH2)2-NH2 group with the proviso that only one of Y and Y' can be such an amino group, the other being a different organic substituent; (10) a group of the formula where R, R2 and m are as above defined; or (11) a group of the formula -(CHR)m-CH(OH)CCl3 where R and m are as above defined.

  烷基双二硫代氨基甲酸衍生物的盐、其制备工艺、含有它们的杀真菌组合物以及防治真菌的方法。 本研究提供了具有杀真菌活性的新型化合物。这些新型化合物是式中烯双二硫代氨基甲酸的盐类： 式中 X 是具有 2 至 6 个碳原子的亚烷基； Y和Y'可以相同或不同，各自代表 (1) 氢，但 Y 和 Y' 不能都是氢； (2) (C6-C20)烷基： (3) 式中的基团 其中 R 是氢或(C1-C6)烷基，R, 是氢、(C1-C18)烷基、(C2-C8)烯基、(C3-C6)炔基、苯基或被至多三个选自(C1-C4)烷基和卤代的相同或不同取代基取代的苯基，且 m 是 0、1 或 2； (4) 式中的基团 其中 R2 为氢、卤代或 (C1-C18) 烷基，n 为 1 或 2，p 为 0、1、2 或 3； (5) 式中的基团 其中 R 如上定义，R3 是氢、羟基或 (C，-C6)-烷基，R4 是 (C1-C18)烷基、(C1-C6)烷基氨基(C1-C6)-烷基、二(C1-C6)烷基氨基(C1-C6)烷基、(C2-C8)烯基、(C3-C6)炔基、羟基(C1-C6)烷基或成盐基团或原子，且 g 是 0 或 1； (6) 式中的基团 其中 R、R3 和 q 如上定义； (7) 式中 R、R3 和 q 如上定义的基团-(CHR)q-CHR3CONH2； (8) 式中 R、R3 和 m 如上定义的硫代酸基团的盐 式中 R、R3 和 m 如上定义； (9) 式中 R 和 R2 如上定义的-CHR-CHR2SH-基团或其金属盐，或-(CH2)2-NH2 或 ,-(CH2)2-NH-(CH2)2-NH2 基团，但 Y 和 Y'中只能有一个是这样的氨基，另一个是不同的有机取代基； (10) 式中的基团 其中 R、R2 和 m 如上定义；或 (11) 式中 R 和 m 如上定义的基团-(CHR)m-CH(OH)CCl3。
• CLEANING COMPOSITION FOR SEMICONDUCTOR CONTAINING UNSATURATED DICARBOXYLIC ACID AND ETHYLENE UREA AND CLEANING METHOD
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP1684337A1

  公开（公告）日：2006-07-26

  A semiconductor wafer cleaning formulation comprising an unsaturated dicarboxylic acid and ethylene urea, and a cleaning method are provided. The formulation comprises an unsaturated dicarboxylic acid and ethylene urea as essential components, and is used for removing residues in semiconductor fabrication. As the unsaturated dicarboxylic acid, maleic acid is particularly preferable. The preferred formulation comprises an unsaturated dicarboxylic acid, ethylene urea, at least one organic carboxylic acid except unsaturated dicarboxylic acid, at least one basic compound except ethylene urea and water. The formulation can optionally comprise at least one selected from the group consisting of an organic solvent, a chelating agent, a surfactant, and phosphonic acid and/or phosphinic acid.

  本发明提供了一种由不饱和二羧酸和乙烯脲组成的半导体晶片清洁配方和一种清洁方法。该配方以不饱和二羧酸和乙烯脲为主要成分，用于清除半导体制造过程中的残留物。作为不饱和二羧酸，马来酸尤为可取。优选配方包括不饱和二羧酸、乙烯脲、至少一种有机羧酸（不饱和二羧酸除外）、至少一种碱性化合物（乙烯脲除外）和水。制剂还可选择包含至少一种选自有机溶剂、螯合剂、表面活性剂、膦酸和/或膦酸的物质。
• Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer
  申请人：Miyazawa Tomoe

  公开号：US20050096237A1

  公开（公告）日：2005-05-05

  A semiconductor wafer cleaning formulation for use in semiconductor fabrication comprising maleic acid and ethylene urea as essential components. The preferred formulation comprises maleic acid, ethylene urea, at least one carboxylic acid except maleic acid, at least one organic amine except ethylene urea and water The formulation can optionally comprise at least one selected from the group consisting of an organic solvent, a chelating agent and a surfactant. The formulation is suitably used for removal of residue from semiconductor wafers following a resist ashing process, particularly for removal of residue from wafers containing delicate copper interconnect and low-k or ultra low-k interlayer dielectrics structures. There is also provided a method for cleaning the wafer by using the formulation.

  一种用于半导体制造的半导体晶片清洗配方，由马来酸和乙烯脲作为基本成分组成。优选的配方包括马来酸、乙烯脲、至少一种羧酸（马来酸除外）、至少一种有机胺（乙烯脲除外）和水。该配方适用于清除抗蚀剂灰化工艺后半导体晶片上的残留物，特别是清除含有精细铜互连和低 k 或超低 k 层间电介质结构的晶片上的残留物。此外，还提供了一种使用该配方清洗晶片的方法。
• EP1690135A4
  申请人：——

  公开号：EP1690135A4

  公开（公告）日：2007-05-09
• RESIST, BARC AND GAP FILL MATERIAL STRIPPING CHEMICAL AND METHOD
  申请人：ADVANCED TECHNOLOGY MATERIALS, INC.

  公开号：EP1690135A2

  公开（公告）日：2006-08-16