Synthesis and Characterization of Novel <I>p</I>-Type Alkyl Bithiophene End-Capped Anthracene and Naphthalene Derivatives for Organic Thin-Film Transistors
作者:Hye Jin Koh、Sang Hun Jang、Chul Young Kim、Sung Chul Shin、Yun-Hi Kim、Soon-Ki Kwon
DOI:10.1166/jnn.2012.5912
日期:2012.5.1
New semiconductors having naphthalene and anthracene cores with hexylated bithiophene side units, 2,6-bis(5'-hexylbithiophen-2'-yl)naphthalene (HBT-NA) and 2,6-bis(5'-hexylbithiophen-2'-yl)anthracene (HBT-AN), were synthesized. HBT-AN and HBT-NA were characterized using FT-IR, 1H-NMR, Mass spectrum and elemental analysis. HBT-AN and HBT-NA showed well ordered crystalline with high thermal stabilities
具有萘和蒽核心以及己基化的噻吩侧基,2,6-双(5'-己基联噻吩-2'-基)萘(HBT-NA)和2,6-双(5'-己基联噻吩-2'-合成了yl)蒽(HBT-AN)。使用FT-IR,1H-NMR,质谱和元素分析对HBT-AN和HBT-NA进行表征。HBT-AN和HBT-NA具有良好的热稳定性,表现出良好的有序晶体,HBT-AN在447摄氏度和HBT-NA在434摄氏度的重量减轻了5%。通过研究溶液和薄膜中的UV-可见光和光致发光(PL),可以观察到相邻分子之间的密排结构。发现HBT-NA和HBT-AN的HOMO能级分别为5.47eV和5.42eV。HBT-NA的空穴迁移率为8.4 x 10(-2)cm2Ns,开/关比为5.6 x 10(5)。HBT-AN显示5。