(5-(4-Methylphenylsulfonyloxyimino)-5H-thiophen-2-ylidene)-(2-methylphenyl)-acetonitrile

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: (5-(4-Methylphenylsulfonyloxyimino)-5H-thiophen-2-ylidene)-(2-methylphenyl)-acetonitrile
• 英文别名: (5-(p-toluenesulfonyl)oxyimino-5H-thiophen-2-ylidene)(2-methylphenyl)acetonitrile；[(Z)-[(5E)-5-[cyano-(2-methylphenyl)methylidene]thiophen-2-ylidene]amino] 4-methylbenzenesulfonate
• 化学式: C₂₀H₁₆N₂O₃S₂
• 分子量: 396.491
• InChiKey: GLCCGSHEKBXUGH-AJYANFPTSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.8
• 重原子数：
  27
• 可旋转键数：
  4
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.1
• 拓扑面积：
  113
• 氢给体数：
  0
• 氢受体数：
  6

文献信息

• Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
  申请人：——

  公开号：US20040167322A1

  公开（公告）日：2004-08-26

  A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.

  一种化学放大型抗蚀组合物，包括在苯环上的2-位含有长链烷氧基基团的特定苯磺酰二氮甲烷，具有许多优点，包括提高分辨率，改善焦点宽度，即使在长期PED上也减少线宽变化或形状退化，涂层、显影和剥离后减少残留物，并在显影后改善图案轮廓，因此适用于微加工。
• Resist composition and patterning process
  申请人：Watanabe Satoshi

  公开号：US20100009299A1

  公开（公告）日：2010-01-14

  The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

  本发明涉及一种抗蚀组合物，例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物，除了在微细加工的光刻工艺中具有更高的分辨率外，特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中；以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物，其包括一种或多种胺化合物或胺氧化合物（除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物），至少具有一个羧基，并且没有氢原子共价键结合到氮原子作为碱性中心。
• POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：NISHI Tsunehiro

  公开号：US20100062374A1

  公开（公告）日：2010-03-11

  A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R 1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.

  一种正性光刻胶组合物包括（A）在酸的作用下在碱性显影剂中变得可溶的树脂组分和（B）酸发生剂。树脂（A）是一种聚合物，包含由式（1）表示的非离去羟基的重复单元，其中R1为H、甲基或三氟甲基，X为单键或亚甲基，m为1或2，并且羟基连接到次级碳原子。当通过光刻工艺处理时，该组合物在分辨率方面得到改善。
• NOVEL TETRACARBOXYLIC DIANHYDRIDE, POLYIMIDE RESIN AND METHOD FOR PRODUCING THE SAME, PHOTOSENSITIVE RESIN COMPOSITIONS, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20190169211A1

  公开（公告）日：2019-06-06

  The present invention has been made in view of the circumstances herein. An object of the present invention is to provide: a tetracarboxylic dianhydride which can lead to a polyimide usable as a base resin of a photosensitive resin composition capable of forming a fine pattern and obtaining high resolution without impairing excellent characteristics such as mechanical strength and adhesiveness; a polyimide resin obtained by using the tetracarboxylic dianhydride; and a method for producing the polyimide resin. The tetracarboxylic dianhydride is shown by the following general formula (1).

  本发明是基于本文中的情况而作出的。本发明的目的是提供：一种四羧酸二酐，可导致聚酰亚胺，作为感光树脂组合物的基树脂，能够形成细微图案并获得高分辨率，同时不损害优异的特性，如机械强度和粘附性；通过使用该四羧酸二酐获得的聚酰亚胺树脂；以及生产该聚酰亚胺树脂的方法。该四羧酸二酐由以下通用式（1）所示。
• Novel photoacid generators, resist compositions, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20080085469A1

  公开（公告）日：2008-04-10

  Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. RC(═O)R 1 —COOCH(CF 3 )CF 2 SO 3 − H + (1a) R is hydroxyl, alkyl, aryl, hetero-aryl, alkoxy, aryloxy or hetero-aryloxy, R 1 is a divalent organic group which may have a heteroatom (O, N or S) containing substituent, or R 1 may form a cyclic structure with R. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）的磺酸。RC(═O)R1—COOCH(CF3)CF2SO3−H+(1a)中，R为羟基、烷基、芳基、杂芳基、烷氧基、芳氧基或杂芳氧基，R1为可能含有杂原子（O、N或S）取代基的二价有机基团，或R1可与R形成环状结构。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物中的使用。