THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20180081272A1
公开(公告)日:2018-03-22
The present invention provides a thermal crosslinking accelerator that can improve an etching selectivity to the upper layer resist thereby improving the pattern form after etching even in a finer pattern than the case of using a conventional silicon-containing resist underlayer film. Thus, provided is a thermal crosslinking accelerator of a polysiloxane compound wherein the thermal crosslinking accelerator of a polysiloxane compound is shown by the following general formula (A-1),
wherein R
11
, R
12
, R
13
, and R
14
each represents a hydrogen atom, a halogen atom, a linear, a branched, a cyclic alkyl group or the like having 1 to 20 carbon atoms, an optionally substituted aryl group having 6 to 20 carbon atoms, or an aralkyl group or the like having 7 to 20 carbon atoms, wherein a part of or all of hydrogen atoms in these groups may be substituted by an alkoxy group or the like. “a”, “b”, “c”, and “d” represent an integer of 0 to 5; in the case that “a”, “b”, “c”, and “d” are 2 or more, R
11
, R
12
, R
13
, and R
14
may form a cyclic structure. Character L represents lithium and the like.