RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYETHER STRUCTURE-CONTAINING RESIN
申请人:Okuyama Hiroaki
公开号:US20130189533A1
公开(公告)日:2013-07-25
There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1):
O—Ar
1
Formula (1)
(in Formula (1), Ar
1
is a C
6-50
arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2):
O—Ar
2
—O—Ar
3
-T-Ar
4
Formula (2)
(in Formula (2), Ar
2
, Ar
3
, and Ar
4
are individually a C
6-50
arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar
1
and Ar
2
containing arylene group may be organic groups containing a fluorene structure.