Triphenylsulfanium dihydrogen phosphate | 59487-06-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Triphenylsulfanium dihydrogen phosphate
• 英文别名: dihydrogen phosphate;triphenylsulfanium
• CAS: 59487-06-8
• 化学式: C18H17O4PS
• 分子量: 360.4
• InChiKey: PZUOZOGFYSVPGH-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  3.22
• 重原子数：
  24
• 可旋转键数：
  3
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  81.6
• 氢给体数：
  2
• 氢受体数：
  4

文献信息

• Patterning process and composition for forming silicon-containing film usable therefor
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2500775A2

  公开（公告）日：2012-09-19

  The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of:using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.

  本发明提供了一种通过光刻法形成底片图案的制图工艺，至少包括以下步骤：使用含有特定含硅化合物（A）和有机溶剂（B）的用于形成含硅薄膜的组合物形成含硅薄膜；使用无硅抗蚀剂组合物在含硅薄膜上形成光刻胶膜；对光刻胶膜进行热处理，然后将光刻胶膜暴露于高能光束；以及使用含有有机溶剂的显影剂溶解光刻胶膜的未暴露区域，从而获得负图案。可以有一种图案化工艺，它是通过采用基于有机溶剂的显影来形成阴性抗蚀剂的最佳图案化工艺，以及在该工艺中使用的用于形成含硅薄膜的组合物。
• Composition for forming resist underlayer film and patterning process using the same
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2540780A1

  公开（公告）日：2013-01-02

  The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition.          R1m1R2m2R3m3Si(OR)(4-m1-m2-m3)     (1)          U(OR4)m4(OR5)m5     (2)          R6m6R7m7R8m8Si(OR9)(4-m6-m7-m8)     (3)          Si(OR10)4     (4)

  本发明提供了一种用于形成含硅抗蚀剂底层薄膜的组合物，该组合物包括 (A)由至少含有下式(1)所示的一种或多种可水解硅化合物和下式(2)所示的一种或多种可水解化合物的混合物经水解-缩合反应得到的含硅化合物，和(B)由至少含有下式(3)所示的一种或多种可水解硅化合物和下式(4)所示的一种或多种可水解硅化合物的混合物经水解-缩合反应得到的含硅化合物。本发明提供了一种用于形成抗蚀剂底层薄膜的组合物，该组合物不仅适用于在负显影中获得的抗蚀剂图案，也适用于在传统正显影中获得的抗蚀剂图案，还提供了一种使用该组合物的图案化工艺。 R1m1R2m2R3m3Si(OR)(4-m1-m2-m3) (1) U(OR4)m4(OR5)m5 (2) R6m6R7m7R8m8Si(OR9)(4-m6-m7-m8) (3) Si(OR10)4 (4)
• Silicon-containing resist underlayer film-forming composition and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2599818A1

  公开（公告）日：2013-06-05

  The present invention is a silicon-containing resist underlayer film-forming composition containing a condensation product and/or a hydrolysis condensation product of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the general formula (2). Thereby, there can be provided a silicon-containing resist underlayer film-forming composition being capable of forming a pattern having a good adhesion, forming a silicon-containing film which can be used as a dry-etching mask between a photoresist film which is the upperlayer film of the silicon-containing film and an organic film which is the underlayer film thereof, and suppressing deformation of the upperlayer resist during the time of dry etching of the silicon-containing film; and a patterning process.         R1m0B(OH)m1(OR)(3-m0-m1)     (1)         R10m10R11m11R12m12Si(OR13)(4-m10-m11-m12)     (2)

  本发明是一种含硅抗蚀剂底层成膜组合物，它含有以下混合物的缩合产物和/或水解缩合产物：一种或多种选自通式（1）所示有机硼化合物及其缩合产物的化合物（A）和一种或多种通式（2）所示硅化合物（B）。因此，可以提供一种含硅抗蚀剂底层成膜组合物，该组合物能够形成具有良好附着力的图案，在作为含硅薄膜的上层薄膜的光刻胶薄膜和作为其底层薄膜的有机薄膜之间形成可用作干蚀刻掩膜的含硅薄膜，并在干蚀刻含硅薄膜时抑制上层抗蚀剂的变形；还可以提供一种图案化工艺。 R1m0B(OH)m1(OR)(3-m0-m1) (1) R10m10R11m11R12m12Si(OR13)(4-m10-m11-m12) (2)
• PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2500775B1

  公开（公告）日：2018-01-03
• COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME
  申请人：OGIHARA Tsutomu

  公开号：US20130005150A1

  公开（公告）日：2013-01-03

  The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition. R 1 m1 R 2 m2 R 3 m3 Si(OR) (4-m1-m2-m3) (1) U(OR 4 ) m4 (OR 5 ) m5 (2) R 6 m6 R 7 m7 R 8 m8 Si(OR 9 ) (4-m6-m7-m8) (3) Si(OR 10 ) 4 (4)