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C8-Ndti | 1447814-61-0

中文名称
——
中文别名
——
英文名称
C8-Ndti
英文别名
9,19-dioctyl-3,13-dithia-9,19-diazahexacyclo[9.9.2.02,6.07,22.012,16.017,21]docosa-1,4,6,11,14,16,21-heptaene-8,10,18,20-tetrone
C8-Ndti化学式
CAS
1447814-61-0
化学式
C34H38N2O4S2
mdl
——
分子量
602.819
InChiKey
QVPXPJAAWJRDBK-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    10
  • 重原子数:
    42
  • 可旋转键数:
    14
  • 环数:
    6.0
  • sp3杂化的碳原子比例:
    0.47
  • 拓扑面积:
    131
  • 氢给体数:
    0
  • 氢受体数:
    6

反应信息

  • 作为产物:
    描述:
    2,7-bis(triethylsilyl)naphtho[2,3-b:6,7-b’]dithiophene-4,5,9,10-tetracarboxylic acid diimide 在 四丁基氟化铵溶剂黄146三苯基膦偶氮二甲酸二乙酯 作用下, 以 四氢呋喃甲苯 为溶剂, 反应 2.5h, 生成 C8-Ndti
    参考文献:
    名称:
    N,N'-未取代的萘二噻吩二酰亚胺:通过N-烷基化和-Arylation的合成和衍生化
    摘要:
    新开发了一种高效,可扩展的合成N,N'-未取代的萘并[2,3- b:6,7 - b ']二噻吩-4,5,9,10-四羧酸二酰亚胺(NDTI)的方法,并且该化合物被用于Mitsunobu反应和与苯基硼酸的铜催化的偶联反应中,以合成一系列N-烷基和苯基取代的NDTI衍生物。NDTI衍生物的新合成方案在可大规模合成以及与广泛N的合成的相容性方面优于先前报道的NDTI衍生物-烷基和苯基衍生物,这反过来又为将NDTI衍生物广泛应用于电子材料铺平了道路。
    DOI:
    10.1021/acs.orglett.6b01785
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文献信息

  • Tuning the electronic properties of thiophene-annulated NDIs: the influence of the lateral fusion position
    作者:Jingjing Wen、Chengyi Xiao、Aifeng Lv、Hironobu Hayashi、Lei Zhang
    DOI:10.1039/c8cc02534g
    日期:——

    We report a new asymmetric thiophene-annulated naphthalenediimide with high electron mobilities.

    我们报告了一种具有高电子迁移率的新的对称噻吩-环戊二酰亚胺
  • Naphthodithiophenediimide (NDTI): Synthesis, Structure, and Applications
    作者:Yuta Fukutomi、Masahiro Nakano、Jian-Yong Hu、Itaru Osaka、Kazuo Takimiya
    DOI:10.1021/ja404753r
    日期:2013.8.7
    A straightforward synthesis of alpha,beta-unsubstituted and alpha-halogenated naphtho[2,3-b:6,7-b']-dithiophenediimides (NDTIs) is described. Electrochemical and optical studies of N,N-dioctyl-NDTI demonstrate that the compound has a low-lying LUMO energy level (4.0 eV below the vacuum level) and a small HOMO-LUMO gap (similar to 2.1 eV). With its interesting electronic and optical properties, in addition to its planar structure, NDTI is a promising building block for the development of novel pi-functional materials. In fact, it afforded n-channel, p-channel, and ambipolar materials, depending on the molecular modification.
  • ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC THIN FILM TRANSISTOR MATERIAL, ORGANIC THIN FILM TRANSISTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND COMPOUND
    申请人:FUJIFILM Corporation
    公开号:US20180159043A1
    公开(公告)日:2018-06-07
    An object of the present invention is to provide an organic thin film transistor having excellent carrier mobility and excellent atmospheric stability, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1) or (2).
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