新开发了一种高效,可扩展的合成N,N'-未取代的萘并[2,3- b:6,7 - b ']二噻吩-4,5,9,10-四羧酸二酰亚胺(NDTI)的方法,并且该化合物被用于Mitsunobu反应和与苯基硼酸的铜催化的偶联反应中,以合成一系列N-烷基和苯基取代的NDTI衍生物。NDTI衍生物的新合成方案在可大规模合成以及与广泛N的合成的相容性方面优于先前报道的NDTI衍生物-烷基和苯基衍生物,这反过来又为将NDTI衍生物广泛应用于电子材料铺平了道路。
A straightforward synthesis of alpha,beta-unsubstituted and alpha-halogenated naphtho[2,3-b:6,7-b']-dithiophenediimides (NDTIs) is described. Electrochemical and optical studies of N,N-dioctyl-NDTI demonstrate that the compound has a low-lying LUMO energy level (4.0 eV below the vacuum level) and a small HOMO-LUMO gap (similar to 2.1 eV). With its interesting electronic and optical properties, in addition to its planar structure, NDTI is a promising building block for the development of novel pi-functional materials. In fact, it afforded n-channel, p-channel, and ambipolar materials, depending on the molecular modification.
ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC THIN FILM TRANSISTOR MATERIAL, ORGANIC THIN FILM TRANSISTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND COMPOUND
申请人:FUJIFILM Corporation
公开号:US20180159043A1
公开(公告)日:2018-06-07
An object of the present invention is to provide an organic thin film transistor having excellent carrier mobility and excellent atmospheric stability, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1) or (2).