申请人:SOLVAY SA
公开号:EP2540800A1
公开(公告)日:2013-01-02
Certain cyclic fluorosubstituted sulfolenes, [1,3,2]-dioxathiepines, sulfolanes and [1,3,2]-dioxathiepanes can be used as etching gases, especially for anisotropic etching in the production of etched items, for example, of semiconductors, e.g. semiconductor memories or semiconductor logic circuits, flat panels, or solar cells. Preferred compounds are hexafluoro-3-sulfolene, (Z)-perfluoro-4,7-dihydro-[1,3,2]-dioxathiepine, hexafluoro-3,4-dihydrosulfolane and 4,4,5,6,7,7-hexafluoro-[1,3,2]-dioxathiepane.
The compounds have the especial advantage that they allow the direct etching of photoresist-protected items where the pattern of the photoresist is defined by light of a wavelength of 193 nm, or even "extreme UV light". Nodes with a very narrow gap, e.g. nodes with any gap in the range of 130 nm to 7 nm and beyond, for example, nodes with gaps of 130 nm, 90 nm, 45 or 32 nm and even 17 nm and 7 nm, can be produced.
某些环状
氟代亚砜、[1,3,2]-二氧代
硫杂环庚烷、亚砜和[1,3,2]-二氧代
硫杂环庚烷可用作蚀刻气体,特别是在生产蚀刻物品(例如半导体存储器或半导体逻辑电路、平板或太阳能电池)时用于各向异性蚀刻。首选化合物为六
氟-3-亚砜、(Z)-
全氟-4,7-二氢-[1,3,2]-二氧代
硫杂环庚烷、六
氟-3,4-二氢亚砜和 4,4,5,6,7,7-六
氟-[1,3,2]-二氧代
硫杂环庚烷。
这些化合物的特别优点是可以直接蚀刻受光刻胶保护的物品,光刻胶的图案是由波长为 193 纳米的光,甚至是 "极紫外光 "确定的。可以生产间隙非常窄的节点,例如间隙在 130 纳米到 7 纳米之间的节点,甚至更大,例如间隙为 130 纳米、90 纳米、45 纳米或 32 纳米,甚至 17 纳米和 7 纳米的节点。