diphenyl(4-isobutyl phenyl)sulfonium triflate | 255056-42-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: diphenyl(4-isobutyl phenyl)sulfonium triflate
• 英文别名: diphenyl-p-isobutylphenylsulfonium triflate；[4-(2-methylpropyl)phenyl]-diphenylsulfanium;trifluoromethanesulfonate
• CAS: 255056-42-9
• 化学式: CF₃O₃S*C₂₂H₂₃S
• 分子量: 468.561
• InChiKey: DRMAIBPBPJNFDH-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  6.03
• 重原子数：
  31
• 可旋转键数：
  5
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.22
• 拓扑面积：
  66.6
• 氢给体数：
  0
• 氢受体数：
  6

文献信息

• PHOTOSENSITIVE COMPOUND AND PHOTORESIST COMPOSITION INCLUDING THE SAME
  申请人：LEE Jae-Woo

  公开号：US20090155714A1

  公开（公告）日：2009-06-18

  A photosensitive compound whose size is smaller than conventional polymer for photoresist, and which has well-defined (uniform) structure, and a photoresist composition including the same are disclosed. The photosensitive compound represented by the following formula. Also, the present invention provides a photoresist composition comprising 1 to 85 wt % (weight %) of the photosensitive compound; 0.05 to weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and 10 to 5000 weight parts of an organic solvent. In the formula, n is 0 or 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, z is 0, 1, 2, 3 or 4, R, R′ and R″ are independently hydrocarbon group of 1 to 30 carbon atoms, preferably 2 to 20 carbon atoms, and R′″ is a hydrogen atom or hydrocarbon group of 1 to 30 carbon atoms, preferably 2 to 20 carbon atoms.

  本发明揭示了一种比传统光刻胶更小的大小，具有明确定义（均匀）结构的光敏化合物，以及包括该光敏化合物的光刻胶组合物。该光敏化合物由以下公式表示。此外，本发明提供了一种光刻胶组合物，包括1至85重量％（重量％）的光敏化合物；相对于100重量部的光敏化合物0.05至重量份的光酸发生剂；以及10至5000重量部的有机溶剂。在公式中，n为0或1，x为1、2、3、4或5，y为2、3、4、5或6，z为0、1、2、3或4，R、R'和R"分别为1至30碳原子的烃基，优选为2至20碳原子，R'"为氢原子或1至30碳原子的烃基，优选为2至20碳原子。
• Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same
  申请人：——

  公开号：US20030017412A1

  公开（公告）日：2003-01-23

  Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymers are disclosed. More specifically, photoresist polymers comprising a photoresist monomer containing fluorine-substituted benzylcarboxylate represented by Formula 1, and a composition comprising the polymer are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in aqueous tetramethylammonium hydroxide (TMAH) solution. And, the present photoresist composition is suitable to form a fine pattern using deep ultraviolet light source such as VUV (157 nm), since the composition has low light absorbance at 193 nm and 157 nm wavelength. 1 wherein, X 1 , X 2 , R 1 , l and m are defined in the specification.

  本发明揭示了光阻单体、由其制备的光阻聚合物以及使用该聚合物的光阻组合物。更具体地，本发明揭示了包含由式1表示的含氟苯甲酸苄基酯光阻单体的光阻聚合物，以及包含该聚合物的组合物。该光阻组合物具有优异的蚀刻抗性、耐热性和粘附性，并且可以在水性四甲基氢氧化铵（TMAH）溶液中显影。此外，由于该组合物在193 nm和157 nm波长处的光吸收率较低，因此该光阻组合物适用于使用深紫外光源（如VUV（157 nm））形成细微图案。其中，X1、X2、R1、l和m在说明书中有定义。
• Water-soluble negative photoresist polymer and composition containing the same
  申请人：Lee Geun Su

  公开号：US20050282080A1

  公开（公告）日：2005-12-22

  Photoresist patterns are formed using a photoresist composition, which includes water, a negative photoresist polymer having a salt-type repeating unit, and a photoacid generator, so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, because the main solvent of the composition is water, the disclosed photoresist composition is environment-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using a light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.

  利用包含水、带有盐型重复单元的负性光阻聚合物和光酸发生剂的光阻组合物形成光阻图案，因此可以通过使用水而不是传统的TMAH溶液进行显影过程。此外，由于该组合物的主要溶剂是水，因此所述的光阻组合物具有环保性，并且在制造半导体器件的高集成度细小电路时使用远紫外光源的光刻工艺中具有低的193 nm和248 nm的光吸收率，这是有用的。
• Photoresist polymer and photoresist composition including the same
  申请人：——

  公开号：US20040265743A1

  公开（公告）日：2004-12-30

  Photoresist polymers and photoresist compositions containing the same are disclosed. A negative photoresist composition containing a photoresist polymer comprising a repeating unit represented by Formula 4 prevents collapse of patterns when photoresist patterns of less than 50 nm are formed. Accordingly, the disclosed negative photoresist composition is very effective for a photolithography process using EUV (Extreme Ultraviolet, 13 nm) light source. 1 wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , a, b and c are as defined in the description.

  本文揭示了光阻聚合物和含有光阻聚合物的光阻组合物。一种负型光阻组合物包含一种光阻聚合物，该聚合物包含由式4表示的重复单元，可防止在形成小于50纳米的光阻图案时图案崩塌。因此，所揭示的负型光阻组合物非常适用于使用EUV（极紫外，13纳米）光源的光刻工艺。其中R1、R2、R3、R4、R5、R6、R7、a、b和c如描述中所定义。
• Photoresist polymer and photoresist composition containing the same
  申请人：Son Seok Min

  公开号：US20060022297A1

  公开（公告）日：2006-02-02

  Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer comprising a polymerization repeating unit represented by Formula I is less sensitive to change in the amount of energy due to its higher active energy than that of a conventional photoresist polymer. As a result, a phenomenon where the portion of the pattern for the storage electrode contact region that receives relatively large amount of light becomes too thin is avoided when the device isolation film pattern is formed, and wherein pattern collapse caused by a high aspect ratio due to high etching resistance is prevented or avoided. wherein R 1 -R 10 , a, b, c and d are as defined in the description.

  本文介绍了光致波普聚合物和光致波普组合物。所述光致波普聚合物包括由式I表示的聚合重复单元，由于其更高的活性能量，对能量变化的敏感度比传统光致波普聚合物低。因此，在形成器件隔离膜图案时，避免了接收相对较大光量的存储电极接触区域的部分变得过薄的现象，并且防止或避免了由于高蚀刻抗性引起的高纵横比导致的图案坍塌。其中，R1-R10，a，b，c和d如描述中所定义。