The present invention belongs to the field of preparation of high performance polymers, and specifically relates to a low dielectric constant polymer containing dinaphthyl and hexafluorocyclobutyl ether units, and preparation method and use thereof. The polymer is prepared as follows: under the effect of an alkali, 1-naphthol bromotetrafluoroethane ether is prepared from 1-naphthol and tetrafluorodibromoethane in an organic solvent, and then reduced by a zinc powder so as to obtain 1-naphthol trifluorovinyl ether. 1-naphthol trifluorovinyl ether is treated at a high temperature to obtain a bisnaphthol hexafluorocyclobutyl ether monomer. The monomer is subjected to oxidative coupling in the presence of ferric trichloride so as to obtain a thermal polymer containing dinaphthyl and hexafluorocyclobutyl structural units with a good film-forming property, and in a nitrogen atmosphere, the temperature for 5% weight loss (T
d5%
) of the obtained film is 437° C., and the carbon residue yield at 1000° C. is 54.24%. The dielectric constant (30 MHz) of the film is 2.33. The polymer is suitable for use in the electronic and electrical industries as an insulation coating layer and an encapsulating material for electron components.
本发明属于高性能聚合物制备领域,具体涉及一种含有二
萘和六
氟环丁基醚单元的低介电常数聚合物,以及其制备方法和用途。该聚合物的制备如下:在碱的作用下,通过有机溶剂从1-
萘酚和四
氟二
溴乙烷制备1-
萘酚溴四
氟乙烷醚,然后通过
锌粉还原得到1-
萘酚三氟乙烯醚。将1-
萘酚三氟乙烯醚在高温下处理,得到双
萘酚六
氟环丁基醚单体。在
三氯化铁的存在下,将单体进行氧化偶联,得到含有二
萘和六
氟环丁基结构单元的热聚合物,具有良好的成膜性能,在氮气气氛下,所得膜的Td5%为437℃,1000℃时的碳残留率为54.24%。该聚合物适用于电子电气行业中作为电子元件的绝缘涂层和封装材料,其膜的介电常数(30
MHz)为2.33。