Formaldehyde--2-ethylaniline (1/1) | 69178-41-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Formaldehyde--2-ethylaniline (1/1)
• 英文别名: 2-ethylaniline;formaldehyde
• CAS: 69178-41-2
• 化学式: C9H13NO
• 分子量: 151.21
• InChiKey: NLPIEWYNPHHAAB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.65
• 重原子数：
  11
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.22
• 拓扑面积：
  43.1
• 氢给体数：
  1
• 氢受体数：
  2

文献信息

• Composition for interlayer filler of layered semiconductor device, layered semiconductor device, and process for producing layered semiconductor device
  申请人：MITSUBISHI CHEMICAL CORPORATION

  公开号：US10125289B2

  公开（公告）日：2018-11-13

  To provide a composition which satisfies a high K1c value, a high glass transition temperature and a low viscosity simultaneously, and which is capable of forming an interlayer filler layer for a layered semiconductor device of which stable bonding is maintained even regardless of changes of environment. A composition comprising an epoxy compound (A) having a viscosity at 25° C. of at most 50 Pa·s, an amine compound (B) having a melting point or softening point of at least 80° C., and an amine compound (C) having a melting point or softening point of less than 80° C., wherein the proportion of the amine compound (C) is at least 1 part by weight and less than 40 parts by weight per 100 parts by weight of the total amount of the amine compound (B) and the amine compound (C).

  提供一种同时满足高 K1c 值、高玻璃化转变温度和低粘度的组合物，该组合物能够形成层状半导体器件的层间填充层，该层间填充层即使在环境变化的情况下也能保持稳定的结合。 一种组合物，包括在 25 摄氏度时粘度不超过 50 Pa-s 的环氧化合物 (A)、熔点或软化点至少为 80 摄氏度的胺化合物 (B) 以及熔点或软化点低于 80 摄氏度的胺化合物 (C)，其中胺化合物 (C) 的比例为每 100 份（重量）胺化合物 (B) 和胺化合物 (C) 的总量中至少 1 份（重量）且少于 40 份（重量）。
• COMPOSITION FOR INTERLAYER FILLER OF LAYERED SEMICONDUCTOR DEVICE, LAYERED SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING LAYERED SEMICONDUCTOR DEVICE
  申请人：MITSUBISHI CHEMICAL CORPORATION

  公开号：US20160009947A1

  公开（公告）日：2016-01-14

  To provide a composition which satisfies a high K1c value, a high glass transition temperature and a low viscosity simultaneously, and which is capable of forming an interlayer filler layer for a layered semiconductor device of which stable bonding is maintained even regardless of changes of environment. A composition comprising an epoxy compound (A) having a viscosity at 25° C. of at most 50 Pa·s, an amine compound (B) having a melting point or softening point of at least 80° C., and an amine compound (C) having a melting point or softening point of less than 80° C., wherein the proportion of the amine compound (C) is at least 1 part by weight and less than 40 parts by weight per 100 parts by weight of the total amount of the amine compound (B) and the amine compound (C).