1-Methyl-3-(1-methyl-propyl)-pyrrolidin | 91425-74-0

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 吡咯烷类
• 英文名称: 1-Methyl-3-(1-methyl-propyl)-pyrrolidin
• 英文别名: 3-sec-butyl-1-methyl-pyrrolidine；3-Butan-2-yl-1-methylpyrrolidine
• CAS: 91425-74-0
• 化学式: C₉H₁₉N
• 分子量: 141.257
• InChiKey: QYQKTYIYUJJAKG-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.5
• 重原子数：
  10
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  3.2
• 氢给体数：
  0
• 氢受体数：
  1

文献信息

• Antibacterial agents
  申请人：Hutchings Kim Marie

  公开号：US20070191333A1

  公开（公告）日：2007-08-16

  Compounds of formula I and methods for their preparation are disclosed. Further disclosed are methods of making biologically active compounds of formula I as well as pharmaceutically acceptable compositions comprising compounds of formula I. Compounds of formula I as disclosed herein can be used in a variety of applications including use as antibacterial agents.

  本发明揭示了式I的化合物及其制备方法。此外，本发明还揭示了制备具有生物活性的式I化合物的方法，以及包含式I化合物的药学可接受组合物的方法。本发明所揭示的式I化合物可用于包括作为抗菌剂在内的各种应用中。
• PROCESSES FOR THE PREPARATION OF DIASTEREOMERICALLY AND ENANTIOMERICALLY ENRICHED OXAZOLINES
  申请人：Química Sintética, S.A.

  公开号：EP3374345B1

  公开（公告）日：2022-01-12
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME
  申请人：INOUE Naoki

  公开号：US20130001751A1

  公开（公告）日：2013-01-03

  An actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) which includes a repeating unit (A) having an ionic structural moiety which generates an acid anion by being decomposed due to irradiation with actinic rays or radiation, a repeating unit (B) having a proton acceptor moiety, and a repeating unit (C) having a group which generates an alkali soluble group by being decomposed by the action of an acid, and the resin (P) has at least one repeating unit which is represented by the general formulae (I) to (III) below as the repeating unit (A) (the reference numerals in the general formulae represent the meaning of the description in the scope of the claims and the specifications).
• US8785917B2
  申请人：——

  公开号：US8785917B2

  公开（公告）日：2014-07-22
• [EN] HAFNIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION<br/>[FR] PRÉCURSEURS CONTENANT DU HAFNIUM POUR UN DÉPÔT EN PHASE VAPEUR
  申请人：AIR LIQUIDE

  公开号：WO2013177284A1

  公开（公告）日：2013-11-28

  Disclosed are hafnium-containing precursors and methods of synthesizing the same. The precursors may be used to deposit hafnium oxide, hafnium silicon oxide and hafnium-metal oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.