This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500° C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1′) by reacting a chlorosilane derivative (3) with a compound M2Z (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material.
In the formulae, R1, R2 are defined in the specification.
本发明旨在提供一种材料,该材料可以在不使用等离子体或类似物的情况下,在低于500°C的低温下高效地产生含
硅薄膜。 本发明涉及通过将
氯硅烷衍
生物(3)与化合物M2Z(4)反应产生由通式(1')表示的
氢硅烷衍
生物,并使用该
氢硅烷衍
生物作为材料制备含
硅薄膜。在式中,R1,R2在规范中定义。