2-(4-((4-(5-carboxy-1,3-dioxoisoindolin-2-yl)phenyl)diphenylsilyl)phenyl)-1,3-dioxoisoindoline-5-carboxylic acid | 1357585-01-3

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 异吲哚及其衍生物
• 英文名称: 2-(4-((4-(5-carboxy-1,3-dioxoisoindolin-2-yl)phenyl)diphenylsilyl)phenyl)-1,3-dioxoisoindoline-5-carboxylic acid
• CAS: 1357585-01-3
• 化学式: C₄₂H₂₆N₂O₈Si
• 分子量: 714.763
• InChiKey: GDIFWJCCUINXSO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.06
• 重原子数：
  53.0
• 可旋转键数：
  8.0
• 环数：
  8.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  149.36
• 氢给体数：
  2.0
• 氢受体数：
  6.0

反应信息

• 作为产物：
  描述：

  bis(4-aminophenyl)diphenylsilane 、 偏苯三酸酐 在 溶剂黄146 作用下， 反应 15.0h， 以96%的产率得到2-(4-((4-(5-carboxy-1,3-dioxoisoindolin-2-yl)phenyl)diphenylsilyl)phenyl)-1,3-dioxoisoindoline-5-carboxylic acid
  参考文献：
  名称：

  SYNTHESIS, CHARACTERIZATION AND THERMAL STUDIES OF WHOLLY AROMATIC POLY(IMIDE-AMIDES) CONTAINING SI AND/OR GE IN THE MAIN CHAIN

  摘要：

  Poly(imide-amides) (PIAs) containing the heteroatoms Si and/or G in the main chain were obtained from diacids, which were synthesized from trimellitie anhydride and the diamines bis(4-aminophenyl)diphenylsilane or his(4-aminophenyl)diphenylgermane. With the same (homilies the polymers containing the heteroatoms Si and Ge in the main chain were obtained. Polymers were soluble in aprotic polar solvents and characterized by IR and H. C-13 and S I NMR spectroscopy, and the results were in agreement with the proposed structures. Low inherent viscosity values (eta(mh)) (0.04 0.12 (dL/g) were obtained, indicating the presence of oligomeric species. The Tg values were obtained by differential scanning calorimetry (DSC), and the results did not show a relation with the nature of the heteroatoms, in the sense that the polymers with Si should have higher Tg values than those with Ge due to the lower volume of the former atom. Also, the low values of eta(m/n) associated to low molecular weight species, have important influence on Tg values. The thermal decomposition temperatures were obtained by dynamic thermogravimetry. These analyses showed that the highest thermal decomposition temperature (TDT) values were obtained for PIA-II and PIA-III with Si and Ge in the repeating unit, and the lowest TOT values with two Si atoms in the Unit.

  DOI：

  10.4067/s0717-97072011000400027