Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I:
wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.
                            本文描述了形成介电薄膜的前体和方法。在一个方面,提供了具有以下
化学式I的
硅前体:其中R1独立选择自氢、直链或支链的C1至C6烷基、直链或支链的C2至C6烯基、直链或支链的C2至C6炔基、C1至C6烷氧基、C1至C6二烷基胺和电子吸引基团,n是从0、1、2、3、4和5中选择的数字;而R2独立选择自氢、直链或支链的C1至C6烷基、直链或支链的C2至C6烯基、直链或支链的C2至C6炔基、C1至C6烷氧基、C1至C6二烷基胺、C6至C10芳基、直链或支链的C1至C6
氟代烷基和C4至C10环烷基。