Benzoic acid;ethanamine | 31000-85-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Benzoic acid;ethanamine
• CAS: 31000-85-8
• 化学式: C9H13NO2
• 分子量: 167.2
• InChiKey: WQPPYOAGCWAZEI-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.35
• 重原子数：
  12
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.22
• 拓扑面积：
  63.3
• 氢给体数：
  2
• 氢受体数：
  3

文献信息

• METHOD FOR PREPARING QUATERNARY PHOSPHONIUM SALTS
  申请人：Microvast Power Systems Co.,Ltd.

  公开号：US20150166587A1

  公开（公告）日：2015-06-18

  A two-step pathway for preparing high pure quaternary phosphonium salts is disclosed. In the first step, hydrogen phosphide (PH 3 ) or a higher phophine reacts with a protonic compound to produce a phosphonium salt, which then reacts with a carbonic acid diester to produce a quaternary phosphonium salt in the second step. On one hand, hydrogen phosphide (PH 3 ) and higher phophines, including primary phosphines, secondary phosphines, and tertiary phosphines, after neutralization with protonic compound, become sufficiently reactive and can be alkylated by carbonic acid diester to form quaternary phosphonium cations. On the other hand, as an anion-exchange procedure is completely avoided, the process not only gives quaternary phosphonium salts of high purity, but also gives people freedom to design the cation and the anion of a quaternary phosphonium salt synchronously by choosing a preferred phosphine and a protonic compound that can supply a desired anion.

  揭示了一种制备高纯度四元磷铵盐的两步途径。在第一步中，氢磷化物（PH3）或更高的磷化物与质子化合物发生反应，产生磷铵盐，然后在第二步中与碳酸二酯发生反应，产生四元磷铵盐。一方面，氢磷化物（PH3）和更高的磷化物，包括一次磷化物、二次磷化物和三次磷化物，在与质子化合物中和后变得足够活性，可以被碳酸二酯烷基化形成四元磷铵阳离子。另一方面，由于完全避免了阴离子交换程序，该过程不仅提供高纯度的四元磷铵盐，还使人们可以通过选择理想的磷化物和可以提供所需阴离子的质子化合物，同时设计四元磷铵盐的阳离子和阴离子。
• Electric Double-Layer Capacitor
  申请人：Kikuchi Taketoshi

  公开号：US20090103241A1

  公开（公告）日：2009-04-23

  An activated carbon comprising a carbonized and activated compound represented by the formula (1): (wherein, R represents a hydrocarbon group having 1 to 12 carbon atoms, said hydrocarbon group may be optionally substituted with hydroxyl group, alkyl group, alkoxy group, aryl group, aryloxy group, sulfonyl group, halogen atoms, nitro group, thioalkyl group, cyano group, carboxyl group, amino group or amide group, R′ represents hydrogen atom or methyl group, and n represents an integer of 4, 6, or 8).

  一种活性炭，包括由式（1）所表示的碳化和活化化合物： 其中，R表示具有1至12个碳原子的碳氢基团，该碳氢基团可以选择地被羟基、烷基、烷氧基、芳基、芳氧基、磺酰基、卤素原子、硝基、硫代烷基、氰基、羧基、氨基或酰胺基取代；R′表示氢原子或甲基基团；n表示4、6或8的整数。
• Process for hydroxylating olefins using a supported osmium catalyst
  申请人：EXXON RESEARCH AND ENGINEERING COMPANY

  公开号：EP0102154A1

  公开（公告）日：1984-03-07

  A process for hydroxylating olefins using a supported osmium catalyst such as OS3(CO)12 adsorbed on a support, such as MgO, and optionally in conjunction with a co-catalyst such as Nal, is disclosed.

  本发明公开了一种使用吸附在氧化镁等载体上的载体锇催化剂（如 OS3(CO)12），并可选择与助催化剂（如 Nal）结合的烯烃羟化工艺。
• Anti-corrosion plastic film containing recycled resin
  申请人：CORTEC CORPORATION

  公开号：EP0653454A1

  公开（公告）日：1995-05-17

  A resinous film at least partially formulated from a recycled resin and containing a vapor phase corrosion inhibitor. One embodiment of the invention is a single layer film which is formulated from three components. The first component is a recycled resin such as polyethylene, the second component is a fresh resin identical to the first, and the third component is a vapor phase anti-corrosion agent. Multi-layer films are also included. The films emit the anti-corrosion agent over a period of time to thereby protect items encased by the film.

  一种树脂薄膜，至少部分由回收树脂配制而成，并含有气相缓蚀剂。本发明的一个实施方案是由三种成分配制而成的单层薄膜。第一种成分是聚乙烯等回收树脂，第二种成分是与第一种成分相同的新树脂，第三种成分是气相防腐剂。此外，还包括多层薄膜。薄膜会在一段时间内释放出防腐剂，从而保护被薄膜包裹的物品。
• Cleaning liquid for producing semiconductor device and process for producing semiconductor device using same
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP0827188A2

  公开（公告）日：1998-03-04

  There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

  本发明公开了一种用于生产半导体器件的清洗液，其包括(A)含氟化合物；(B)水溶性或水混溶性有机溶剂；以及(C)无机酸和/或有机酸，可选地，还包括(D)季铵盐或(D')特定有机羧酸铵盐和/或有机羧酸胺盐；以及一种半导体器件的生产工艺，在表面装有绝缘膜层或金属导电层的基片上形成抗蚀图案，通过干法蚀刻形成通孔或电线，通过氧等离子体灰化处理去除抗蚀图案，并用上述清洗液进行清洗处理。上述清洗液和生产工艺可轻松去除干法蚀刻时形成的沉积聚合物，而不会损害金属膜和绝缘膜。