Ethanone, 1,1'-(1,3-propanediylbis(oxy-4,1-phenylene))bis(2,2,2-trifluoro-, bis(O-((4-methylphenyl)sulfonyl)oxime) | 415682-68-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Ethanone, 1,1'-(1,3-propanediylbis(oxy-4,1-phenylene))bis(2,2,2-trifluoro-, bis(O-((4-methylphenyl)sulfonyl)oxime)
• 英文别名: [(Z)-[2,2,2-trifluoro-1-[4-[3-[4-[(Z)-N-(4-methylphenyl)sulfonyloxy-C-(trifluoromethyl)carbonimidoyl]phenoxy]propoxy]phenyl]ethylidene]amino] 4-methylbenzenesulfonate
• CAS: 415682-68-7
• 化学式: C₃₃H₂₈F₆N₂O₈S₂
• 分子量: 758.7
• InChiKey: TUBYYMWIJQUBNW-QLVAPADBSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  9.7
• 重原子数：
  51
• 可旋转键数：
  14
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.21
• 拓扑面积：
  147
• 氢给体数：
  0
• 氢受体数：
  16

文献信息

• POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
  申请人：Tsuchihashi Toru

  公开号：US20100248146A1

  公开（公告）日：2010-09-30

  A positive resist composition comprising (A) a resin which contains all of the repeating units represented by formulae (I) to (III), and becomes soluble in an alkali developer by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and a pattern forming method using the composition. A represents a group capable of decomposing and leaving by the action of an acid, each R 1 independently represents hydrogen or a methyl group, R 2 represents a phenyl group or a cyclohexyl group, m represents 1 or 2, and n represents an integer of 0 to 2. By virtue of this construction, a resist composition ensuring high resolution, good pattern profile, sufficient depth of focus, little defects after development, and sufficiently high plasma etching resistance is provided.

  一种正性光刻胶组合物，包括(A)一种树脂，该树脂包含由公式(I)至(III)表示的所有重复单元，并通过酸的作用在碱性显影剂中变得可溶，以及(B)一种能够在光刻射线或辐射照射下产生酸的化合物；以及使用该组合物的图案形成方法。其中，A表示通过酸的作用分解并离开的基团，每个R1独立地表示氢或甲基基团，R2表示苯基或环己基，m表示1或2，n表示0至2的整数。由于这种构造，提供了一种光刻胶组合物，确保高分辨率、良好的图案轮廓、足够的焦深度、开发后几乎没有缺陷以及足够高的等离子体刻蚀抗性。
• RESIST PATTERN FORMING METHOD, RESIST PATTERN, POSITIVE RESIST COMPOSITION, NANOIMPRINT MOLD AND PHOTOMASK
  申请人：TSUCHIHASHI Toru

  公开号：US20130052568A1

  公开（公告）日：2013-02-28

  A resist pattern forming method includes: in the following order, (1) a step of forming a film on a substrate by using a positive resist composition; (2) a step of exposing the film; and (4) a step of performing development by using an alkali developer after the exposing, wherein the positive resist composition contains (A) a polymer compound having a repeating unit represented by the following formula (I) as defined in the specification, a thickness of the film formed in the step (1) is from 15 to 40 nm, and an alkali component concentration in the alkali developer is from 0.5 to 1.1 mass %.

  一种抗性图案形成方法包括：按照以下顺序，（1）使用正性光刻胶组合物在基板上形成薄膜的步骤；（2）曝光薄膜的步骤；以及（3）在曝光后使用碱性显影剂进行显影的步骤。其中，正性光刻胶组合物包含（A）聚合物化合物，其重复单元由规范中定义的以下式子（I）表示，步骤（1）中形成的膜厚度为15至40纳米，碱性显影剂中的碱性成分浓度为0.5至1.1质量%。
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION
  申请人：FUJIFILM CORPORATION

  公开号：US20150010855A1

  公开（公告）日：2015-01-08

  There is provided an actinic ray-sensitive or radiation-sensitive composition containing (α) a compound represented by the formula (αI) capable of generating an acid having a size of 200 Å 3 or more in volume and (β) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and the formula (αI) is defined as herein, and a resist film formed using the actinic ray-sensitive or radiation-sensitive composition, a resist-coated mask blanks coated with the resist film, a resist pattern forming method comprising exposing the resist film and developing the exposed film, a photomask obtained by exposing and developing the resist-coated mask blanks, a method for manufacturing an electronic device, comprising the resist pattern forming method and an electronic device manufactured by the manufacturing method of an electronic device.

  提供一种感光或辐射敏感的组合物，其中包含(α)一种化合物，其由公式(αI)表示，能够产生大小为200Å3或更大的体积的酸，以及(β)一种化合物，能够在受到光辐射或辐射时产生酸，公式(αI)的定义如本文所述。还提供了使用该感光或辐射敏感组合物形成的光阻膜，涂有光阻膜的光阻涂层掩模坯料，包括曝光光阻膜和显影曝光后膜的光阻图案形成方法，通过曝光和显影涂有光阻涂层的掩模坯料获得的光掩模，以及一种电子器件的制造方法，包括光阻图案形成方法和制造电子器件的电子器件制造方法，以及通过该电子器件制造方法制造的电子器件。
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH
  申请人：FUJII Kana

  公开号：US20110081612A1

  公开（公告）日：2011-04-07

  According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, wherein each of R 1 independently represents a hydrogen atom or an optionally substituted methyl group, R 2 represents a halogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, an optionally substituted aryl group or an optionally substituted aralkyl group, and n is an integer of 0 to 5, provided that when n is 2 or greater, multiple R 2 s may be identical to or different from each other.
• RESIST PATTERN FORMING METHOD, RESIST PATTERN, CROSSLINKABLE NEGATIVE RESIST COMPOSITION, NANOIMPRINT MOLD AND PHOTOMASK
  申请人：TSUCHIHASHI Toru

  公开号：US20130052567A1

  公开（公告）日：2013-02-28

  A resist pattern forming method includes: in the following order, (1) a step of forming a film on a substrate by using a negative resist composition capable of undergoing negative conversion by a crosslinking reaction; (2) a step of exposing the film; and (4) a step of performing development by using an alkali developer after the exposing, wherein the negative resist composition contains (A) a polymer compound having a repeating unit represented by the following formula (I) as defined in the specification, a thickness of the film formed in the step (1) is from 15 to 40 nm, and an alkali component concentration in the alkali developer is from 0.5 to 1.1 mass %.