Synthesis and thermal decomposition of copper(I) silyloxide complexes. X-ray crystal structures of [Cu(OSiPh3)]4 and [Cu(OSiPh3)(PMe2Ph)]2
摘要:
Homoleptic copper(I) silyloxide complexes [Cu(OSiR3)]4 [SiR3 = SiPh3 (2), SiPh3.toluene (1) SiMe2But(3), SiEt3 (4)] were prepared by reaction of copper(I) mesityl with equivalent amounts of silanol. Reaction of [Cu(OSiR3)]4 with phosphine donors gave adduct complexes featuring lower aggregation numbers: [Cu(OSiPh3)(PEt3)]2 (5), [Cu(OSiPh3) (PMe2Ph)]2 (6); [Cu(OSiMC2But)(PPh3)2] (7). No reaction was observed between [Cu(O SiPh3)]4.toluene and either sulphur donors (1,3,5-trithiane) or hard Lewis donors (THF, TMEDA). Potassium-sequestered complexes, [K(crown)][Cu(OSiPh3)2].1/2 toluene (8) and [K(crown)][Cu(OSiMe2But)2] (9), were prepared by reaction of [Cu(OSiR3]4, with equivalent amounts of [K(crown)][OSiR3]. The following complexes were characterized by single-crystal X-ray diffraction: [Cu(OSiPh3)]4 (2): a tetramer featuring: (1) linear copper centres linked by bridging -OSiPh3 ligands; (2) a planar Cu4O4 core with a crystallographically-imposed centre of inversion; and (3) no Cu-Cu or Cu-C bonding interactions. [Cu(OSiPh3)(PMe2Ph)]2 (6): a dimer featuring: (1) trigonal planar copper centres linked by bridging -OSiPh3 groups; (2) a planar Cu2O2P2 core with a crystallographically-imposed centre of inversion; and (3) unsymmetrical -OSiPh3 bridging between copper centres with Cu-O distances differing by 0.1 angstrom. The thermal decomposition of the [Cu(O SiR3)]4 series was investigated through bulk thermolysis studies, thermal gravimetric analysis and differential scanning calorimetry. Decomposition pathways involved Cu-O bond homolysis leading to elemental copper.