1-Methyl-3-butyl-pyrrolidin | 98956-48-0

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 吡咯烷类
• 英文名称: 1-Methyl-3-butyl-pyrrolidin
• 英文别名: 3-butyl-1-methyl-pyrrolidine；3-Butyl-1-methylpyrrolidine
• CAS: 98956-48-0
• 化学式: C₉H₁₉N
• 分子量: 141.257
• InChiKey: QVQQLAIGRHPUQC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.6
• 重原子数：
  10
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  3.2
• 氢给体数：
  0
• 氢受体数：
  1

文献信息

• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP
  申请人：Shibayama Wataru

  公开号：US20110143149A1

  公开（公告）日：2011-06-16

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R 1 a R 2 b Si(R 3 ) 4-(a+b) . A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

  提供一种用于光刻的抗蚀底层膜形成组合物，用于形成可用作硬掩膜或底部防反射涂层的抗蚀底层膜，或者是不与抗蚀剂混合且具有比抗蚀剂更高的干法刻蚀速率的抗蚀底层膜。该组合物包括具有离子基的硅烷化合物，其中具有离子基的硅烷化合物是一种可水解的有机硅烷，其分子中具有一个离子基、其水解产物或水解缩合产物。该组合物用作光刻的抗蚀底层膜形成组合物。组合物包括具有离子基的硅烷化合物和不具有离子基的硅烷化合物，其中具有离子基的硅烷化合物在整个硅烷化合物中的摩尔比例小于1％，例如为0.01到0.95％。可水解的有机硅烷可以是式的化合物：R1aR2bSi（R3）4-（a+b）。通过将所述组合物按照权利要求1至14中的任一项涂布到半导体基片上并烘烤所得到的抗蚀底层膜。
• Selective removal of aromatics
  申请人：BP Oil International Limited

  公开号：EP2338955A1

  公开（公告）日：2011-06-29

  According to the present invention there is provided a process for reducing the concentration of one or more aromatic compounds in a feedstock comprising one or more aromatic compounds and one or more olefinic compounds, which process comprises contacting the feedstock with an ionic liquid comprising an anionic component and a cationic component to produce a product with a higher mole ratio of olefinic compounds to aromatic compounds than the feedstock, and an ionic liquid phase with a lower mole ratio of olefinic compounds to aromatic compounds than the feedstock, wherein the surface charge profile of the cationic component has a maximum value at a charge density value (σ) in the range -0.0085 < σ < -0.0040 e/Å2, and wherein from 25% to 65% of the molecular surface area of the anionic component has a charge density value (σ) in the range -0.0085 < σ < +0.0085 e/Å2, where e represents the charge of an electron.

  根据本发明，提供了一种用于降低由一种或多种芳香族化合物和一种或多种烯烃化合物组成的原料中的一种或多种芳香族化合物浓度的工艺，该工艺包括将原料与由阴离子组分和阳离子组分组成的离子液体接触，生成烯烃化合物与芳香族化合物摩尔比高于原料的产物、和烯烃化合物与芳香族化合物的摩尔比低于原料的离子液相，其中阳离子组分的表面电荷谱在电荷密度值(σ)在-0.0085＜σ＜-0.0040e/Å2，其中25％至65％的阴离子组分分子表面积的电荷密度值(σ)在-0.0085＜σ＜+0.0085e/Å2的范围内，其中e代表电子的电荷。
• MEDICINAL COMPOSITION FOR INHIBITING THE EXPRESSION OF ATP-CITRATE LYASE AND USE THEREOF
  申请人：Ajinomoto Co., Inc.

  公开号：EP1547614B1

  公开（公告）日：2011-01-19
• US8864894B2
  申请人：——

  公开号：US8864894B2

  公开（公告）日：2014-10-21