6,16-Dimethyl-7,11,15-trithiapentacyclo[10.7.0.02,10.04,8.014,18]nonadeca-1(12),2(10),3,5,8,13,16,18-octaene | 1273320-80-1

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并噻吩类
• 英文名称: 6,16-Dimethyl-7,11,15-trithiapentacyclo[10.7.0.02,10.04,8.014,18]nonadeca-1(12),2(10),3,5,8,13,16,18-octaene
• CAS: 1273320-80-1
• 化学式: C₁₈H₁₂S₃
• 分子量: 324.491
• InChiKey: RQYZYTUWRUNLLP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  7.1
• 重原子数：
  21
• 可旋转键数：
  0
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.11
• 拓扑面积：
  84.7
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  2-甲基噻吩 、 (2,5-bis(bromomethyl)thiophene-3,4-diyl)bis(methanetriyl) tetraacetate 在 zinc dibromide 作用下， 以 1,2-二氯乙烷 为溶剂， 反应 1.0h， 以50%的产率得到6,16-Dimethyl-7,11,15-trithiapentacyclo[10.7.0.02,10.04,8.014,18]nonadeca-1(12),2(10),3,5,8,13,16,18-octaene
  参考文献：
  名称：

  路易斯酸介导的芳基/杂芳基稠合咔唑的一锅法合成，涉及级联 Friedel-Crafts 烷基化/电环化/芳构化反应序列

  摘要：

  在路易斯酸催化下，以适当取代的 2/3-（溴甲基）吲哚和芳烯为原料开发了]-稠合咔唑。本协议的有吸引力的特征是，可以通过竞争和杂种丁烯的应用选择可以容易地访问各种π缀合的咔唑。环化协议已扩展到（溴甲基）苯以及 2,5-双（溴甲基）噻吩。发现吲哚基-2-甲基乙酸酯的环化不如相应的2-(溴甲基)吲哚合适。然而，在苄体系的情况下，发现相应的醋酸盐更适用。在这项工作中开发的路易斯酸介导的级联环化序列可能会导致在多环芳香杂环领域的新应用。

  DOI：

  10.1002/ejoc.201001309

文献信息

• ORGANIC SEMICONDUCTOR ELEMENT, COMPOSITION, METHOD OF PURIFYING COMPOUND, AND APPLICATION THEREOF
  申请人：FUJIFILM CORPORATION

  公开号：EP3780118A1

  公开（公告）日：2021-02-17

  Provided are an organic semiconductor element, a composition, an organic semiconductor composition, an organic semiconductor film, a method of producing a composition, a method of manufacturing an organic semiconductor element, and a method of purifying a compound. The organic semiconductor element includes an organic semiconductor film formed by forming a composition into a film, in which the composition contains a compound represented by the following formula (where R1 to R8 each independently represent a hydrogen atom or a substituent), and a total content of sodium element, potassium element, silicon element, and aluminum element in the composition is 50 ppm or less. The organic semiconductor element has high heat resistance of carrier mobility.

  本发明提供了一种有机半导体元件、一种组合物、一种有机半导体组合物、一种有机半导体薄膜、一种生产组合物的方法、一种制造有机半导体元件的方法以及一种提纯化合物的方法。有机半导体元件包括通过将组合物形成薄膜而形成的有机半导体薄膜，其中组合物含有下式表示的化合物（其中 R1 至 R8 各自独立地代表氢原子或取代基），且组合物中钠元素、钾元素、硅元素和铝元素的总含量为 50 ppm 或更少。有机半导体元素具有高载流子迁移率耐热性。
• Organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor device, material for organic transistor, coating solution for non-light-emitting organic semiconductor device, method for manufacturing organic transistor, method for manufacturing organic semiconductor film, organic semiconductor film for non-light-emitting organic semiconductor device, and method for synthesizing organic semiconductor material
  申请人：FUJIFILM Corporation

  公开号：US10270043B2

  公开（公告）日：2019-04-23

  Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR5; Y and Z each represents CR6, an oxygen, sulfur, selenium, or nitrogen atom, or NR7; a ring containing Y and Z is an aromatic heterocycle; any one of R1 and R2 and the aromatic heterocycle containing Y and Z or any one of R3 and R4 and a benzene ring may be bonded to each other through a specific divalent linking group; R1, R2, and R5 to R8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R3 and R4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2).

  本发明提供了一种具有高载流子迁移率的有机晶体管，该晶体管的半导体有源层含有分子量等于或小于3000的下式表示的化合物、化合物、用于非发光有机半导体器件的有机半导体材料、用于有机晶体管的材料、用于非发光有机半导体器件的涂层溶液、制造有机晶体管的方法、制造有机半导体薄膜的方法、用于非发光有机半导体器件的有机半导体薄膜以及制造有机半导体材料的方法。 (X代表氧原子、硫原子、硒原子或碲原子或NR5；Y和Z各自代表CR6、氧原子、硫原子、硒原子或氮原子或NR7；含有Y和Z的环是芳香杂环；R1和R2中的任一个与含有Y和Z的芳香杂环或R3和R4中的任一个与苯环可通过特定的二价连接基团相互键合；R1、R2 和 R5 至 R8 分别代表氢原子、烷基、烯基、炔基、芳基或杂芳基；R3 和 R4 分别代表烷基、烯基、炔基、芳基或杂芳基；m 和 n 分别为 0 至 2 的整数。）
• Coating solution for non-light-emitting organic semiconductor device, organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor device, material for organic transistor, method for manufacturing organic transistor, and method for manufacturing organic semiconductor film
  申请人：FUJIFILM Corporation

  公开号：US10270044B2

  公开（公告）日：2019-04-23

  Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

  本发明提供了一种用于具有高载流子迁移率的非发光有机半导体器件的涂层溶液，该涂层溶液含有式（2）代表的化合物和沸点等于或高于100℃的溶剂、一种有机晶体管、一种化合物、一种用于非发光有机半导体器件的有机半导体材料、一种用于有机晶体管的材料、一种制造有机晶体管的方法以及一种制造有机半导体薄膜的方法。 (在式(2)中，R11和R12各自独立地代表氢原子、烷基、烯基、炔基或烷氧基，并且可以具有取代基，式(2)中的芳香族部分可以被卤原子取代)。
• Microcrystalline organic semiconductor film, organic semiconductor transistor, and method of manufacturing organic semiconductor transistor
  申请人：FUJIFILM Corporation

  公开号：US10985327B2

  公开（公告）日：2021-04-20

  Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat. Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm. X, Y, and Z each independently represent a specific ring-constituting atom. R1 and R2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R3 and R4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

  本发明提供了一种有机半导体薄膜、一种由该有机半导体薄膜形成的有机半导体晶体管以及一种制造该有机半导体晶体管的方法。在有机半导体薄膜中，即使在有机半导体薄膜被图案化或暴露于高热的情况下，也能有效抑制裂纹的形成或传播。 本发明提供了一种有机半导体薄膜、由该有机半导体薄膜形成的有机半导体晶体管以及该有机半导体晶体管的制造方法。微晶有机半导体薄膜包括由下式(1)表示的化合物，该化合物的分子量为 3000 或更低，其晶域尺寸为 1 nm 至 100 nm。 X、Y 和 Z 各自独立地代表一个特定的成环原子。R1 和 R2 各自独立地代表氢原子、烷基、烯基、炔基、芳基或杂芳基。R3 和 R4 各自独立地代表卤原子、烷基、烯基、炔基、芳基或杂芳基。
• ORGANIC TRANSISTOR, COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, MATERIAL FOR ORGANIC TRANSISTOR, COATING SOLUTION FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ORGANIC TRANSISTOR, METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM FOR NON-LIGHT-EMITTING ORGANIC SEMICONDUCTOR DEVICE, AND METHOD FOR SYNTHESIZING ORGANIC SEMICONDUCTOR MATERIAL
  申请人：FUJIFILM Corporation

  公开号：US20170018724A1

  公开（公告）日：2017-01-19

  Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR 5 ; Y and Z each represents CR 6 , an oxygen, sulfur, selenium, or nitrogen atom, or NR 7 ; a ring containing Y and Z is an aromatic heterocycle; any one of R 1 and R 2 and the aromatic heterocycle containing Y and Z or any one of R 3 and R 4 and a benzene ring may be bonded to each other through a specific divalent linking group; R 1 , R 2 , and R 5 to R 8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R 3 and R 4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2.)