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2-thienylsulfonyl-trifluoromethanesulfonyl-diazomethane | 356058-60-1

中文名称
——
中文别名
——
英文名称
2-thienylsulfonyl-trifluoromethanesulfonyl-diazomethane
英文别名
2-[(Z)-diazo(trifluoromethylsulfonyl)methyl]sulfonylthiophene
2-thienylsulfonyl-trifluoromethanesulfonyl-diazomethane化学式
CAS
356058-60-1
化学式
C6H3F3N2O4S3
mdl
——
分子量
320.294
InChiKey
YLQHEUWEVHPDJC-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.2
  • 重原子数:
    18
  • 可旋转键数:
    3
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.17
  • 拓扑面积:
    115
  • 氢给体数:
    0
  • 氢受体数:
    9

文献信息

  • Photoacid generators and photoresists comprising same
    申请人:Shipley Company, L.L.C.
    公开号:US20020009663A1
    公开(公告)日:2002-01-24
    New photoacid generator compounds (“PAGs”) are provided and photoresist compositions that comprise such compounds. In particular, non-ionic substituted disulfone compounds PAGS are provided, including disulfone PAGs that contain a diazo, substituted methylene or hydrazine moiety interposed between substituted sulfone groups. Also provided are positive- and negative-acting chemically amplified resists that contain such PAGs and that are preferably imaged with sub-300 nm or sub-200 nm radiation such as 248 nm, 193 nm, or 157 nm radiation.
    提供了新的光酸发生剂化合物(“PAGs”),以及包含这些化合物的光刻胶组合物。具体提供了非离子取代二砜化合物PAGS,包括含有二代磺酰基团之间的重氮基团、取代亚甲基或基团的二砜PAGs。还提供了包含这些PAGs的正向和负向化学增感光刻胶,最好使用小于300纳米或小于200纳米的辐射进行成像,例如248纳米、193纳米或157纳米辐射。
  • US6783912B2
    申请人:——
    公开号:US6783912B2
    公开(公告)日:2004-08-31
  • [EN] PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME<br/>[FR] GENERATEURS D'ACIDES PHOTOSENSIBLES ET PHOTORESISTS COMPRENANT CES DERNIERS
    申请人:SHIPLEY CO LLC
    公开号:WO2001063363A2
    公开(公告)日:2001-08-30
    New photoacid generator compounds ('PAGs') are provided and photoresist compositions that comprise such compounds. In particular, non-ionic substituted disulfone compounds PAGS are provided, including disulfone PAGs that contain a diazo, substituted methylene or hydrazine moiety interposed between substituted sulfone groups. Also provided are positive- and negative-acting chemically amplified resists that contain such PAGs and that are preferably imaged with sub-300 nm or sub-200 nm radiation such as 248 nm, 193 nm, or 157 nm radiation.
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