1,1,3,3,3-pentafluoro-2-(4-phenylbenzoyloxy)propanesulfonate | 911785-43-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 1,1,3,3,3-pentafluoro-2-(4-phenylbenzoyloxy)propanesulfonate
• 英文别名: 1,1,3,3,3-Pentafluoro-2-(4-phenylbenzoyl)oxypropane-1-sulfonic acid
• CAS: 911785-43-8
• 化学式: C₁₆H₁₁F₅O₅S
• 分子量: 410.318
• InChiKey: OLGRZRDHJXECNV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.2
• 重原子数：
  27
• 可旋转键数：
  6
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.19
• 拓扑面积：
  89
• 氢给体数：
  1
• 氢受体数：
  10

文献信息

• Resist composition and patterning process
  申请人：Watanabe Satoshi

  公开号：US20100009299A1

  公开（公告）日：2010-01-14

  The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

  本发明涉及一种抗蚀组合物，例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物，除了在微细加工的光刻工艺中具有更高的分辨率外，特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中；以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物，其包括一种或多种胺化合物或胺氧化合物（除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物），至少具有一个羧基，并且没有氢原子共价键结合到氮原子作为碱性中心。
• POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：NISHI Tsunehiro

  公开号：US20100062374A1

  公开（公告）日：2010-03-11

  A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R 1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.

  一种正性光刻胶组合物包括（A）在酸的作用下在碱性显影剂中变得可溶的树脂组分和（B）酸发生剂。树脂（A）是一种聚合物，包含由式（1）表示的非离去羟基的重复单元，其中R1为H、甲基或三氟甲基，X为单键或亚甲基，m为1或2，并且羟基连接到次级碳原子。当通过光刻工艺处理时，该组合物在分辨率方面得到改善。
• NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Ohsawa Youichi

  公开号：US20090246694A1

  公开（公告）日：2009-10-01

  Photoacid generators generate sulfonic acids of formula ( 1 a) upon exposure to high-energy radiation. ROC(═O)R 1 —COOCH 2 CF 2 SO 3 − H + (1a) RO is OH or C 1 -C 20 organoxy, R 1 is a divalent C 1 -C 20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）的磺酸。 ROC(═O)R1—COOCH2CF2SO3−H+(1a) RO为OH或C1-C20有机氧基，R1为二价的C1-C20脂肪族基团或与RO形成环状结构。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物的使用。
• ACID-LABILE ESTER MONOMER HAVING SPIROCYCLIC STRUCTURE, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Kinsho Takeshi

  公开号：US20100304295A1

  公开（公告）日：2010-12-02

  An acid-labile ester monomer of spirocyclic structure has formula (1) wherein Z is a monovalent group having a polymerizable double bond, X is a divalent group which forms a cyclopentane, cyclohexane or norbornane ring, R 2 is H or monovalent hydrocarbon, R 3 and R 4 are H or monovalent hydrocarbon, or R 3 and R 4 , taken together, stand for a divalent group which forms a cyclopentane or cyclohexane ring, and n is 1 or 2. A polymer obtained from the acid-labile ester monomer has so high reactivity in acid-catalyzed elimination reaction that the polymer may be used to formulate a resist composition having high resolution.

  一种酸敏感酯单体具有螺环结构，其化学式如下（1），其中Z是具有可聚合双键的一价基团，X是形成环戊烷、环己烷或诺邦烷环的二价基团，R2是H或一价碳氢基团，R3和R4是H或一价碳氢基团，或者R3和R4一起表示形成环戊烷或环己烷环的二价基团，n为1或2。从酸敏感酯单体获得的聚合物在酸催化消除反应中具有很高的反应性，因此可以用于制备具有高分辨率的抗蚀组合物。
• POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Ohashi Masaki

  公开号：US20100055608A1

  公开（公告）日：2010-03-04

  A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R 1 is H, F, methyl or trifluoromethyl, R 2 , R 3 and R 4 are C 1 -C 10 alkyl, alkenyl or oxoalkyl or C 6 -C 18 aryl, aralkyl or aryloxoalkyl, or two of R 2 , R 3 and R 4 may bond together to form a ring with S, A is a C 1 -C 10 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.

  提供具有式（1）的可聚合含阴离子的亚砜盐，其中R1为H、F、甲基或三氟甲基，R2、R3和R4为C1-C10烷基、烯基或氧代烷基或C6-C18芳基、芳基烷基或芳氧代烷基，或R2、R3和R4中的两个可以结合在一起形成与S的环，A为C1-C10有机基团，n为0或1。该亚砜盐在暴露于高能辐射时生成非常强的磺酸。还提供了包含从该亚砜盐衍生的聚合物的抗蚀组合物。