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11,12-bisC4F9dibenzphenazine | 1507294-55-4

中文名称
——
中文别名
——
英文名称
11,12-bisC4F9dibenzphenazine
英文别名
11,12-bis(1,1,2,2,3,3,4,4,4-nonafluorobutyl)phenanthro[9,10-b]quinoxaline
11,12-bisC4F9dibenzphenazine化学式
CAS
1507294-55-4
化学式
C28H10F18N2
mdl
——
分子量
716.372
InChiKey
GYHOESJTANEOKU-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    10
  • 重原子数:
    48
  • 可旋转键数:
    6
  • 环数:
    5.0
  • sp3杂化的碳原子比例:
    0.29
  • 拓扑面积:
    25.8
  • 氢给体数:
    0
  • 氢受体数:
    20

反应信息

  • 作为产物:
    描述:
    全氟碘代丁烷菲醌4,5-二溴-1,2-苯二胺 作用下, 以 二甲基亚砜 为溶剂, 反应 44.0h, 生成 11,12-bisC4F9dibenzphenazine
    参考文献:
    名称:
    Rational Design of Lamellar π–π Stacked Organic Crystalline Materials with Short Interplanar Distance
    摘要:
    Organic crystalline materials having a lamellar pi-pi stacked structural motif with short interplanar distance are significant for many applications. By asymmetrically introducing perfluoroalkyl substituents onto and polarizable sulfur atoms into N-containing heteroaromatics, we successfully synthesized a novel type of aromatic material that preferentially forms lamellar pi-pi stacked crystalline materials with a interplanar pi-pi distance of 3.247 angstrom, more than 0.1 angstrom shorter than that of highly oriented pyrolytic graphite (HOPG) where interplanar distance ranges from 3.35 to 3.39 angstrom.
    DOI:
    10.1021/cg401637a
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文献信息

  • Rational Design of Lamellar π–π Stacked Organic Crystalline Materials with Short Interplanar Distance
    作者:Anjaneyulu Putta、Jeffery D. Mottishaw、Zhihua Wang、Haoran Sun
    DOI:10.1021/cg401637a
    日期:2014.1.2
    Organic crystalline materials having a lamellar pi-pi stacked structural motif with short interplanar distance are significant for many applications. By asymmetrically introducing perfluoroalkyl substituents onto and polarizable sulfur atoms into N-containing heteroaromatics, we successfully synthesized a novel type of aromatic material that preferentially forms lamellar pi-pi stacked crystalline materials with a interplanar pi-pi distance of 3.247 angstrom, more than 0.1 angstrom shorter than that of highly oriented pyrolytic graphite (HOPG) where interplanar distance ranges from 3.35 to 3.39 angstrom.
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