p-Vinylbenzyl-methyl-carbinol | 7570-55-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: p-Vinylbenzyl-methyl-carbinol
• 英文别名: 1-(4-Ethenylphenyl)propan-2-ol
• CAS: 7570-55-0
• 化学式: C₁₁H₁₄O
• 分子量: 162.232
• InChiKey: LLWNVRSHEMAPGD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.7
• 重原子数：
  12
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.27
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

文献信息

• Negative resist composition and resist pattern forming process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US10120279B2

  公开（公告）日：2018-11-06

  A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

  提供一种负性抗蚀组合物，包括（A）一种甜菜碱型的砜化合物和（B）一种聚合物。该抗蚀组合物在曝光步骤期间有效控制酸扩散，在图案形成期间具有非常高的分辨率，并形成具有最小LER的图案。
• SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160090355A1

  公开（公告）日：2016-03-31

  A sulfonium salt of formula (0-1) is provided wherein W is alkylene or arylene, R 01 is a monovalent hydrocarbon group, m is 0, 1 or 2, k is an integer: 0≦k≦5+4m, R 101 , R 102 and R 103 are a monovalent hydrocarbon group, or at least two of R 101 , R 102 and R 103 may bond together to form a ring with the sulfur atom, and L is a single bond, ester, sulfonic acid ester, carbonate or carbamate bond. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.

  提供一种化学式为（0-1）的磺鎓盐，其中W是烷基或芳基，R01是一价碳氢基团，m为0、1或2，k为整数：0≦k≦5+4m，R101、R102和R103是一价碳氢基团，或者R101、R102和R103中至少两个可以相互结合形成与硫原子的环，L是单键、酯、磺酸酯、碳酸酯或氨基甲酸酯键。包含磺鎓盐作为PAG的抗蚀组成物在经过电子束或极紫外光刻过程时表现出非常高的分辨率。可获得具有最小LER的图案。
• CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20180180998A1

  公开（公告）日：2018-06-28

  A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.

  提供一种负型光刻胶组合物，包括具有公式(A)的磺化物化合物和基础聚合物。该光刻胶组合物在图案形成期间表现出高分辨率，并形成具有最小LER的图案。
• RESIST COMPOSITION AND RESIST PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20190010119A1

  公开（公告）日：2019-01-10

  The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition.

  本发明提供了一种抗蚀剂组合物，包括：（A）含有阴离子和阳离子的磺酸盐，其中阳离子包括以下通式（A1）所示的部分结构；以及（B）含有以下通式（B1）所示的重复单元的聚合物化合物。本发明提供了一种抗蚀剂组合物，其在使用高能量光束作为光源的光刻技术中，具有调节酸扩散的能力，能够引起较少的缺陷，并且在使用该抗蚀剂组合物进行抗蚀图案化过程中具有出色的光刻性能。
• POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3203319A1

  公开（公告）日：2017-08-09

  The present invention provides a polymer compound containing a repeating unit shown by the following general formula (1). There can be provided a polymer compound usable in a negative resist composition that can achieve high resolution of 50 nm or less and small LER and cause very few defects, a negative resist composition using the polymer compound, and a patterning process using the negative resist composition.

  本发明提供了一种含有以下通式（1）所示重复单元的聚合物化合物。本发明提供了一种可用于负型抗蚀剂组合物的聚合物化合物，该化合物可实现 50 nm 或更低的高分辨率和较小的 LER，并可造成极少的缺陷；还提供了一种使用该聚合物化合物的负型抗蚀剂组合物，以及一种使用该负型抗蚀剂组合物的图案化工艺。