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9-chloro-1H-benzo[f]indol-2(3H)-one | 1549705-04-5

中文名称
——
中文别名
——
英文名称
9-chloro-1H-benzo[f]indol-2(3H)-one
英文别名
9-Chloro-1,3-dihydrobenzo[f]indol-2-one
9-chloro-1H-benzo[f]indol-2(3H)-one化学式
CAS
1549705-04-5
化学式
C12H8ClNO
mdl
——
分子量
217.655
InChiKey
VSUJMFBGGVCNGS-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.6
  • 重原子数:
    15
  • 可旋转键数:
    0
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.08
  • 拓扑面积:
    29.1
  • 氢给体数:
    1
  • 氢受体数:
    1

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    1-溴辛烷9-chloro-1H-benzo[f]indol-2(3H)-onepotassium carbonate 作用下, 以 N,N-二甲基甲酰胺 为溶剂, 反应 12.0h, 以4%的产率得到
    参考文献:
    名称:
    Synthesis of a thiophene-fused isoindigo derivative: a potential building block for organic semiconductors
    摘要:
    Thiophene-fused isoindigo (TII) was synthesized from thieno[2,3-flindol-6(7H)-one in a one-pot reaction, in which the alkylation, oxidation and condensation were finished in one step. It exhibits better intramolecular charge transfer properties and higher reductive potential compared with isoindigo(II), as evidenced by its optical and electrochemical properties, which shows that it might be used as a building block for n-type or ambipolar OFET materials. (C) 2013 Elsevier Ltd. All rights reserved.
    DOI:
    10.1016/j.tetlet.2013.12.076
  • 作为产物:
    描述:
    1-氯-2-氨基萘盐酸硫酸盐酸羟胺四氯化钛sodium sulfate 作用下, 以 四氢呋喃 为溶剂, 反应 5.0h, 生成 9-chloro-1H-benzo[f]indol-2(3H)-one
    参考文献:
    名称:
    Synthesis of a thiophene-fused isoindigo derivative: a potential building block for organic semiconductors
    摘要:
    Thiophene-fused isoindigo (TII) was synthesized from thieno[2,3-flindol-6(7H)-one in a one-pot reaction, in which the alkylation, oxidation and condensation were finished in one step. It exhibits better intramolecular charge transfer properties and higher reductive potential compared with isoindigo(II), as evidenced by its optical and electrochemical properties, which shows that it might be used as a building block for n-type or ambipolar OFET materials. (C) 2013 Elsevier Ltd. All rights reserved.
    DOI:
    10.1016/j.tetlet.2013.12.076
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