triphenylsulfonium 2-(adamantane-1-carbonyloxy)ethanesulfonate | 1228823-28-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: triphenylsulfonium 2-(adamantane-1-carbonyloxy)ethanesulfonate
• 英文别名: 2-(adamantane-1-carbonyloxy)ethanesulfonate;triphenylsulfanium
• CAS: 1228823-28-6
• 化学式: C₁₃H₁₉O₅S*C₁₈H₁₅S
• 分子量: 550.74
• InChiKey: WYYSEXOKTYXQKL-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  6.07
• 重原子数：
  38
• 可旋转键数：
  7
• 环数：
  7.0
• sp3杂化的碳原子比例：
  0.39
• 拓扑面积：
  92.9
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  三苯基溴化锍 、 Sodium;2-(adamantane-1-carbonyloxy)ethanesulfonate 以 二氯甲烷 、 水 为溶剂， 生成 triphenylsulfonium 2-(adamantane-1-carbonyloxy)ethanesulfonate
  参考文献：
  名称：

  WO2023/53977

  摘要：

  公开号：

文献信息

• SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS
  申请人：OHASHI Masaki

  公开号：US20100143830A1

  公开（公告）日：2010-06-10

  A sulfonium salt has formula (1) wherein R 1 is a monovalent hydrocarbon group except vinyl and isopropenyl, R 2 , R 3 , and R 4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl or may bond together to form a ring with the sulfur atom, and n is 1 to 3. A chemically amplified resist composition comprising the sulfonium salt is capable of forming a fine feature pattern of good profile after development due to high resolution, improved focal latitude, and minimized line width variation and profile degradation upon prolonged PED.

  一种硫铵盐的化学式为（1），其中R1是一种一价碳氢基团，但不包括乙烯基和异丙烯基，R2、R3和R4是烷基、烯基、氧代烷基、芳基、芳基烷基或芳基氧代烷基，或者它们可以相互连接形成与硫原子的环，并且n为1至3。包含该硫铵盐的化学增感抗剂组合物能够由于高分辨率、改善的焦距宽度、以及在长时间PED后最小化线宽变化和剖面降解而形成良好剖面的精细特征图案。
• Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process
  申请人：Ohashi Masaki

  公开号：US08394570B2

  公开（公告）日：2013-03-12

  A sulfonium salt has formula (1) wherein R1 is a monovalent hydrocarbon group except vinyl and isopropenyl, R2, R3, and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl or may bond together to form a ring with the sulfur atom, and n is 1 to 3. A chemically amplified resist composition comprising the sulfonium salt is capable of forming a fine feature pattern of good profile after development due to high resolution, improved focal latitude, and minimized line width variation and profile degradation upon prolonged PED.

  一种硫鎓盐的化学式为（1），其中R1是一种单价碳氢基团，除去乙烯基和异丙烯基，R2、R3和R4是烷基、烯基、氧代烷基、芳香基、芳香烷基或芳香氧代烷基，或者它们可以结合在一起形成与硫原子相连的环，n为1至3。包含该硫鎓盐的化学增强型光刻胶组合物由于具有高分辨率、改善的焦点宽度、最小化的线宽变化和长时间暴露后的剖面降解，能够形成良好的细微结构图案。
• COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170038683A1

  公开（公告）日：2017-02-09

  The present invention provides a compound shown by the formula (1), wherein R 1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; A represents a single bond or a linear divalent hydrocarbon group having 1 to 30 carbon atoms or a branched or cyclic divalent hydrocarbon group having 3 to 30 carbon atoms, in which the hydrocarbon group may contain a heteroatom, and a part or all of hydrogen atoms in the hydrocarbon group may be substituted with a group containing a heteroatom; “n” represents 0 or 1, provided that “n” is 0 when A is a single bond; and M + represents a cation. This compound is suitable as a raw material of a polymer compound usable for a base resin of a resist composition that has high resolution and high sensitivity and is excellent in balance of lithography properties such as LWR and CDU.
• US8394570B2
  申请人：——

  公开号：US8394570B2

  公开（公告）日：2013-03-12
• US9897916B2
  申请人：——

  公开号：US9897916B2

  公开（公告）日：2018-02-20