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4-Methylthio-N-tert.-butylanilin | 35347-11-6

中文名称
——
中文别名
——
英文名称
4-Methylthio-N-tert.-butylanilin
英文别名
N-(tert-butyl)-4-(methylthio)aniline;N-tert-butyl-4-methylsulfanylaniline
4-Methylthio-N-tert.-butylanilin化学式
CAS
35347-11-6
化学式
C11H17NS
mdl
——
分子量
195.329
InChiKey
QJHFHLUKKMNWHK-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.4
  • 重原子数:
    13
  • 可旋转键数:
    3
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.45
  • 拓扑面积:
    37.3
  • 氢给体数:
    1
  • 氢受体数:
    2

文献信息

  • Amino Compounds for Treatment of Complement Mediated Disorders
    申请人:Achillion Pharmaceuticals, Inc.
    公开号:US20150239894A1
    公开(公告)日:2015-08-27
    Compounds, methods of use, and processes for making inhibitors of complement factor D comprising Formula I, or a pharmaceutically acceptable salt or composition thereof, wherein R 12 or R 13 on the A group is an amino substituent (R 32 ) are provided. The inhibitors described herein target factor D and inhibit or regulate the complement cascade at an early and essential point in the alternative complement pathway, and reduce factor D's ability to modulate the classical and lectin complement pathways. The inhibitors of factor D described herein are capable of reducing the excessive activation of complement, which has been linked to certain autoimmune, inflammatory, and neurodegenerative diseases, as well as ischemia-reperfusion injury and cancer.
    本文提供了公式I或其药学上可接受的盐或组合物所组成的抑制补体因子D的化合物、使用方法和制备过程,其中A组上的R12或R13是基取代基(R32)。所述抑制剂靶向因子D并在替代性补体途径的早期和关键点上抑制或调节补体级联反应,并减少因子D调节经典和凝集素补体途径的能力。本文所述的因子D抑制剂能够减少过度激活补体,这与某些自身免疫性、炎症性和神经退行性疾病以及缺血再灌注损伤和癌症有关。
  • Compositions for the filling of high aspect ratio vertical interconnect access (VIA) holes
    申请人:Heraeus Precious Metals North America Conshohocken LLC
    公开号:US11289238B2
    公开(公告)日:2022-03-29
    A solvent-free electroconductive composition may be used to make electroconductive lines on a surface of a substrate or electroconductive plugs within via holes of a substrate. The solvent-free electroconductive composition is generally made of about 40 to about 95 wt % of a conductive component, about 4 to about 30 wt % of a polymer or oligomer comprising a reactive functional group, up to about 20 wt % of a monomeric diluent comprising a reactive functional group, and up to about 3 wt % of a curing agent. In some instances, the solvent-free electroconductive composition further includes up to about 3 wt % of a lubricating compound. Substrates made using solvent-free electroconductive compositions may be used in printed circuit boards, integrated circuits, solar cells, capacitors, resistors, thermistors, varistors, resonators, transducers, inductors, and multilayer ferrite beads.
    无溶剂导电组合物可用于在基材表面制作导电线或在基材通孔内制作导电塞。无溶剂导电组合物一般由约 40 至约 95 wt % 的导电成分、约 4 至约 30 wt % 含有活性官能团的聚合物或低聚物、最多约 20 wt % 含有活性官能团的单体稀释剂和最多约 3 wt % 的固化剂组成。在某些情况下,无溶剂导电组合物还包括最多约 3 wt % 的润滑化合物。使用无溶剂导电组合物制成的基板可用于印刷电路板、集成电路、太阳能电池、电容器、电阻器、热敏电阻器、压敏电阻器、谐振器、传感器、电感器和多层氧体磁珠。
  • COMPOSITIONS FOR THE FILLING OF HIGH ASPECT RATIO VERTICAL INTERCONNECT ACCESS (VIA) HOLES
    申请人:Heraeus Precious Metals North America Conshohocken LLC.
    公开号:US20210174983A1
    公开(公告)日:2021-06-10
    A solvent-free electroconductive composition may be used to make electroconductive lines on a surface of a substrate or electroconductive plugs within via holes of a substrate. The solvent-free electroconductive composition is generally made of about 40 to about 95 wt % of a conductive component, about 4 to about 30 wt % of a polymer or oligomer comprising a reactive functional group, up to about 20 wt % of a monomeric diluent comprising a reactive functional group, and up to about 3 wt % of a curing agent. In some instances, the solvent-free electroconductive composition further includes up to about 3 wt % of a lubricating compound. Substrates made using solvent-free electroconductive compositions may be used in printed circuit boards, integrated circuits, solar cells, capacitors, resistors, thermistors, varistors, resonators, transducers, inductors, and multilayer ferrite beads.
  • US9598446B2
    申请人:——
    公开号:US9598446B2
    公开(公告)日:2017-03-21
  • [EN] COMPOSITIONS FOR THE FILLING OF HIGH ASPECT RATIO VERTICAL INTERCONNECT ACCESS (VIA) HOLES<br/>[FR] COMPOSITIONS POUR LE REMPLISSAGE DE TROUS D'ACCÈS D'INTERCONNEXION VERTICALE (VIA) À RAPPORT D'ASPECT ÉLEVÉ
    申请人:HERAEUS PRECIOUS METALS NORTH AMERICA CONSHOHOCKEN LLC
    公开号:WO2021112933A1
    公开(公告)日:2021-06-10
    A solvent-free electroconductive composition may be used to make electroconductive lines on a surface of a substrate or electroconductive plugs within via holes of a substrate. The solvent- free electroconductive composition is generally made of about 40 to about 95 wt% of a conductive component, about 4 to about 30 wt% of a polymer or oligomer comprising a reactive functional group, up to about 20 wt% of a monomeric diluent comprising a reactive functional group, and up to about 3 wt% of a curing agent. In some instances, the solvent-free electroconductive composition further includes up to about 3 wt% of a lubricating compound. Substrates made using solvent-free electroconductive compositions may be used in printed circuit boards, integrated circuits, solar cells, capacitors, resistors, thermistors, varistors, resonators, transducers, inductors, and multilayer ferrite beads.
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